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首頁>M28F101-200K1>規(guī)格書詳情

M28F101-200K1中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

M28F101-200K1
廠商型號

M28F101-200K1

功能描述

1 Mb 128K x 8, Chip Erase FLASH MEMORY

文件大小

197.89 Kbytes

頁面數(shù)量

23

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團官網(wǎng)

原廠標(biāo)識
STMICROELECTRONICS
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-8-4 8:30:00

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M28F101-200K1規(guī)格書詳情

DESCRIPTION

The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the

chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F101 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.

特性 Features

? 5V±10 SUPPLY VOLTAGE

? 12V PROGRAMMING VOLTAGE

? FAST ACCESS TIME: 70ns

? BYTE PROGRAMING TIME: 10μs typical

? ELECTRICAL CHIP ERASE in 1s RANGE

? LOW POWER CONSUMPTION

– Stand-by Current: 100μA max

? 10,000 ERASE/PROGRAM CYCLES

? INTEGRATED ERASE/PROGRAM-STOP TIMER

? OTP COMPATIBLE PACKAGES and PINOUTS

? ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: 07h

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