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M28F101-150N3中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書
M28F101-150N3規(guī)格書詳情
DESCRIPTION
The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the
chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F101 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.
特性 Features
? 5V±10 SUPPLY VOLTAGE
? 12V PROGRAMMING VOLTAGE
? FAST ACCESS TIME: 70ns
? BYTE PROGRAMING TIME: 10μs typical
? ELECTRICAL CHIP ERASE in 1s RANGE
? LOW POWER CONSUMPTION
– Stand-by Current: 100μA max
? 10,000 ERASE/PROGRAM CYCLES
? INTEGRATED ERASE/PROGRAM-STOP TIMER
? OTP COMPATIBLE PACKAGES and PINOUTS
? ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 07h
產(chǎn)品屬性
- 型號：
M28F101-150N3
- 制造商：
STMICROELECTRONICS
- 制造商全稱：
STMicroelectronics
- 功能描述：
1 Mb 128K x 8, Chip Erase FLASH MEMORY
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
DIP-32 |
12335 |
詢價 | |||
ST |
23+ |
NA |
575 |
專做原裝正品,假一罰百! |
詢價 | ||
ST/意法 |
24+ |
NA/ |
1800 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
ST/意法 |
2223+ |
DIP-32 |
26800 |
只做原裝正品假一賠十為客戶做到零風險 |
詢價 | ||
ST |
23+ |
DIP |
16900 |
正規(guī)渠道,只有原裝! |
詢價 | ||
ST |
24+ |
DIP32 |
3629 |
原裝優(yōu)勢!房間現(xiàn)貨!歡迎來電! |
詢價 | ||
ST |
9518+ |
DIP-32 |
4 |
原裝 |
詢價 | ||
ST |
DIP-32 |
68500 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
ST/意法 |
2402+ |
DIP-32 |
8324 |
原裝正品!實單價優(yōu)! |
詢價 | ||
24+ |
3000 |
公司存貨 |
詢價 |
