首頁>M28F101-150P3>規(guī)格書詳情
M28F101-150P3中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書
M28F101-150P3規(guī)格書詳情
DESCRIPTION
The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the
chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F101 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.
特性 Features
? 5V±10 SUPPLY VOLTAGE
? 12V PROGRAMMING VOLTAGE
? FAST ACCESS TIME: 70ns
? BYTE PROGRAMING TIME: 10μs typical
? ELECTRICAL CHIP ERASE in 1s RANGE
? LOW POWER CONSUMPTION
– Stand-by Current: 100μA max
? 10,000 ERASE/PROGRAM CYCLES
? INTEGRATED ERASE/PROGRAM-STOP TIMER
? OTP COMPATIBLE PACKAGES and PINOUTS
? ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 07h
產品屬性
- 型號：
M28F101-150P3
- 制造商：
STMICROELECTRONICS
- 制造商全稱：
STMicroelectronics
- 功能描述：
1 Mb 128K x 8, Chip Erase FLASH MEMORY
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
DIP |
89630 |
當天發(fā)貨全新原裝現(xiàn)貨 |
詢價 | ||
ST |
23+ |
DIP-32 |
8560 |
受權代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
SGS |
05+ |
原廠原裝 |
4462 |
只做全新原裝真實現(xiàn)貨供應 |
詢價 | ||
ST |
24+ |
DIP |
16900 |
支持樣品,原裝現(xiàn)貨,提供技術支持! |
詢價 | ||
24+ |
3000 |
公司存貨 |
詢價 | ||||
ST |
2511 |
DIP |
16900 |
電子元器件采購降本 30%!盈慧通原廠直采,砍掉中間差價 |
詢價 | ||
STM |
23+24 |
DIP- |
9680 |
原盒原標.進口原裝.支持實單 .價格優(yōu)勢 |
詢價 | ||
ST |
24+ |
DIP32 |
3629 |
原裝優(yōu)勢!房間現(xiàn)貨!歡迎來電! |
詢價 | ||
STM |
2022 |
DIP |
8500 |
全新原裝現(xiàn)貨 |
詢價 | ||
ST |
23+ |
DIP-32 |
12335 |
詢價 |
