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M28F101-150P6中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
M28F101-150P6規(guī)格書詳情
DESCRIPTION
The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the
chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F101 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.
特性 Features
? 5V±10 SUPPLY VOLTAGE
? 12V PROGRAMMING VOLTAGE
? FAST ACCESS TIME: 70ns
? BYTE PROGRAMING TIME: 10μs typical
? ELECTRICAL CHIP ERASE in 1s RANGE
? LOW POWER CONSUMPTION
– Stand-by Current: 100μA max
? 10,000 ERASE/PROGRAM CYCLES
? INTEGRATED ERASE/PROGRAM-STOP TIMER
? OTP COMPATIBLE PACKAGES and PINOUTS
? ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 07h
產(chǎn)品屬性
- 型號：
M28F101-150P6
- 制造商：
STMICROELECTRONICS
- 制造商全稱：
STMicroelectronics
- 功能描述：
1 Mb 128K x 8, Chip Erase FLASH MEMORY
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
STM |
2022 |
DIP |
8500 |
全新原裝現(xiàn)貨 |
詢價 | ||
ST |
24+ |
PLCC |
9860 |
一級代理/放心購買 |
詢價 | ||
ST |
23+ |
DIP-32 |
12335 |
詢價 | |||
ST/意法 |
23+ |
PLCC |
13000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
ST |
PLCC |
68500 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
ST |
23+ |
DIP |
16900 |
正規(guī)渠道,只有原裝! |
詢價 | ||
SGS |
05+ |
原廠原裝 |
4462 |
只做全新原裝真實現(xiàn)貨供應(yīng) |
詢價 | ||
STM |
23+24 |
DIP- |
9680 |
原盒原標(biāo).進口原裝.支持實單 .價格優(yōu)勢 |
詢價 | ||
ST |
24+/25+ |
13 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
ST |
24+ |
DIP |
200000 |
原裝進口正口,支持樣品 |
詢價 |
