描述 Description

The LET9070FB is a common source N-channel enhancement mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9070FB is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity.

特性 Features

Excellent thermal stability
Common source configuration
POUT (@ 28 V)= 70 W with 16 dB gain @ 945 MHz
BeO free package
In compliance with the 2002/95/EC European directive
Bidirectional ESD

簡介

LET9070FB屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由制造生產(chǎn)的LET9070FB晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導(dǎo)體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。