描述 Description

The LET20045C is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.0 GHz. The LET20045C is designed for high gain and broadband performance operating in common source mode at 36 V. It is ideal for base station applications requiring high linearity.

特性 Features

Excellent thermal stability
Common source configuration
P
OUT (@ 28 V)= 54 W with 13.3 dB gain @ 2000 MHz
P
OUT (@ 36 V)= 65 W with 12.5 dB gain @ 2000 MHz
BeO free package
In compliance with the 2002/95/EC European directive

簡介

LET20045C屬于分立半導體產品的晶體管-FETMOSFET-射頻。由制造生產的LET20045C晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。