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描述 Description
The IRF6609 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
? Low Conduction Losses
? Low Switching Losses
? Ideal Synchronous Rectifier MOSFET
? Low Profile (<0.7 mm)
? Dual Sided Cooling Compatible
? Compatible with existing Surface Mount Techniques
產(chǎn)品屬性
- 型號：
IRF6609TR1
- 功能描述：
MOSFET 20V N-CH 2.0 mOhm HEXFET 46nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
890 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
IR |
10+ |
DirectFET |
890 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR |
2016+ |
DIRECTFET |
6528 |
房間原裝進(jìn)口現(xiàn)貨假一賠十 |
詢價 | ||
IR |
21+ |
DIRECTFET |
30000 |
百域芯優(yōu)勢 實單必成 可開13點增值稅 |
詢價 | ||
IR |
22+ |
QFN |
8000 |
原裝正品支持實單 |
詢價 | ||
IR |
24+ |
DirectFETtradeIso |
7500 |
詢價 | |||
IR |
17+ |
DIRECTFET |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
Infineon Technologies |
22+ |
DirectFET? Isometric MT |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
Infineon Technologies |
23+ |
原裝 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
Infineon Technologies |
23+ |
原裝 |
7000 |
詢價 |
