首頁>IRF6607TR1>規(guī)格書詳情
IRF6607TR1中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
相關(guān)芯片規(guī)格書
更多IRF6607TR1規(guī)格書詳情
描述 Description
The IRF6607 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and process. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
? Application Specific MOSFETs
? Ideal for CPU Core DC-DC Converters
? Low Conduction Losses
? High Cdv/dt Immunity
? Low Profile (<0.7 mm)
? Dual Sided Cooling Compatible
? Compatible with existing Surface Mount Techniques
產(chǎn)品屬性
- 型號：
IRF6607TR1
- 功能描述：
MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
25+23+ |
QFN |
18980 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價 | ||
IR |
24+ |
QFN |
7900 |
新進(jìn)庫存/原裝 |
詢價 | ||
IOR |
QFN |
68500 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
IR |
2450+ |
QFN |
6540 |
只做原裝正品假一賠十為客戶做到零風(fēng)險!! |
詢價 | ||
IR |
19+ |
QFN |
27000 |
詢價 | |||
INTERNATIONAL RECTIFIER |
2023+ |
SMD |
4864 |
安羅世紀(jì)電子只做原裝正品貨 |
詢價 | ||
Infineon Technologies |
23+ |
原裝 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
Infineon Technologies |
23+ |
原裝 |
7000 |
詢價 | |||
IR |
23+ |
13209 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | |||
Infineon Technologies |
2022+ |
DirectFET? 等容 MT |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 |
