IRF6603中文資料IRF數據手冊PDF規(guī)格書
IRF6603規(guī)格書詳情
描述 Description
The IRF6603 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and process. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
? Application Specific MOSFETs
? Ideal for CPU Core DC-DC Converters
? Low Conduction Losses
? High Cdv/dt Immunity
? Low Profile (<0.7 mm)
? Dual Sided Cooling Compatible
? Compatible with existing Surface Mount Techniques
產品屬性
- 型號：
IRF6603
- 功能描述：
MOSFET 30V 1 N-CH HEXFET 8.1mOhms 11nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Infineon Technologies |
24+ |
原裝 |
5000 |
原裝正品,提供BOM配單服務 |
詢價 | ||
IOR |
21+ |
QFN/Dir |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 | ||
IR |
23+ |
QFNDirectFET-M |
3000 |
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價 | ||
IOR |
09+ |
DirectFE |
5500 |
原裝無鉛,優(yōu)勢熱賣 |
詢價 | ||
IR |
23+ |
QFN |
66572 |
##公司主營品牌長期供應100%原裝現貨可含稅提供技術 |
詢價 | ||
IR |
23+ |
QFN |
50000 |
全新原裝正品現貨,支持訂貨 |
詢價 | ||
IR |
24+ |
SC70-5 |
13624 |
新進庫存/原裝 |
詢價 | ||
Infineon Technologies |
22+ |
DirectFET? Isometric MT |
9000 |
原廠渠道,現貨配單 |
詢價 | ||
IR |
23+24 |
DirectFET |
9860 |
原廠原包裝。終端BOM表可配單?？砷_13%增值稅 |
詢價 | ||
IR |
22+ |
BGA |
8000 |
原裝正品支持實單 |
詢價 |
