首頁>IRF6608TR1>規(guī)格書詳情
IRF6608TR1中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF6608TR1規(guī)格書詳情
描述 Description
The IRF6608 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
● Application Specific MOSFETs
● Ideal for CPU Core DC-DC Converters
● Low Conduction Losses
● Low Switching Losses
● Low Profile (<0.7 mm)
● Dual Sided Cooling Compatible
● Compatible with existing Surface Mount Techniques
產(chǎn)品屬性
- 型號：
IRF6608TR1
- 功能描述：
MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Infineon Technologies |
22+ |
DirectFET? Isometric ST |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IR |
24+ |
SMD |
3000 |
全新原裝現(xiàn)貨 優(yōu)勢庫存 |
詢價 | ||
IR |
22+ |
QFN5*4 |
8000 |
原裝正品支持實單 |
詢價 | ||
IR |
24+ |
65230 |
詢價 | ||||
IR |
23+ |
SMD |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IR |
21+ |
SMD |
20000 |
全新原裝 公司現(xiàn)貨 價優(yōu) |
詢價 | ||
IR |
22+ |
QFN |
18000 |
原裝現(xiàn)貨原盒原包.假一罰十 |
詢價 | ||
IR |
24+ |
SMD |
26200 |
原裝現(xiàn)貨,誠信經(jīng)營! |
詢價 | ||
IR |
13+ |
MOSFET |
2258 |
原裝分銷 |
詢價 | ||
Infineon Technologies |
23+ |
原裝 |
7000 |
詢價 |
