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IRF640NPBF中文資料KERSEMI數(shù)據(jù)手冊(cè)PDF規(guī)格書
| 廠商型號(hào) |
IRF640NPBF |
| 功能描述 | Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature |
| 文件大小 |
8.24278 Mbytes |
| 頁(yè)面數(shù)量 |
11 頁(yè) |
| 生產(chǎn)廠商 | Kersemi Electronic Co., Ltd. |
| 企業(yè)簡(jiǎn)稱 |
KERSEMI |
| 中文名稱 | Kersemi Electronic Co., Ltd.官網(wǎng) |
| 原廠標(biāo)識(shí) | KERSEMI |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | |
| 人工找貨 | IRF640NPBF價(jià)格和庫(kù)存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
IRF640NPBF規(guī)格書詳情
描述 Description
Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced Process Technology
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Ease of Paralleling
● Simple Drive Requirements
● Lead-Free
產(chǎn)品屬性
- 型號(hào)：
IRF640NPBF
- 功能描述：
MOSFET MOSFT 200V 18A 150mOhm 44.7nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
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