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INA214CIDCKT

INA21xVoltageOutput,Low-orHigh-SideMeasurement,Bidirectional,Zero-DriftSeries,Current-ShuntMonitors

1Features ?UpdatedformattomatchnewTIlayoutandflow. Tables,figuresandcross-referencesuseanew numberingsequencethroughoutthedocument. WideCommon-ModeRange:–0.3Vto26V ?OffsetVoltage:±35μV(Maximum,INA210) (EnablesShuntDropsof10-mVFull-Scale) ?Accuracy: –

TI1Texas Instruments

德州儀器美國德州儀器公司

INA214CIRSWR

VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional

TI1Texas Instruments

德州儀器美國德州儀器公司

INA214CIRSWR

VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional,Zero-DriftSeries,Current-ShuntMonitors

TI1Texas Instruments

德州儀器美國德州儀器公司

INA214CIRSWR

INA21xVoltageOutput,Low-orHigh-SideMeasurement,Bidirectional,Zero-DriftSeries,Current-ShuntMonitors

1Features ?UpdatedformattomatchnewTIlayoutandflow. Tables,figuresandcross-referencesuseanew numberingsequencethroughoutthedocument. WideCommon-ModeRange:–0.3Vto26V ?OffsetVoltage:±35μV(Maximum,INA210) (EnablesShuntDropsof10-mVFull-Scale) ?Accuracy: –

TI1Texas Instruments

德州儀器美國德州儀器公司

INA214CIRSWT

VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional,Zero-DriftSeries,Current-ShuntMonitors

TI1Texas Instruments

德州儀器美國德州儀器公司

INA214CIRSWT

VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional

TI1Texas Instruments

德州儀器美國德州儀器公司

IRFD214

PowerMOSFET(Vdss=250V,Rds(on)=2.0ohm,Id=0.45A)

VDSS=250V RDS(on)=2.0? ID=0.45A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

IRFD214

PowerMOSFET

VDS(V)250 RDS(on)(Ω)VGS=10V2.0 Qg(Max.)(nC)8.2 Qgs(nC)1.8 Qgd(nC)4.5 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes

VishayVishay Siliconix

威世科技威世科技半導體

IRFD214

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene

VishayVishay Siliconix

威世科技威世科技半導體

IRFD214PBF

HEXFETPowerMOSFET

VDSS=250V RDS(on)=2.0? ID=0.45A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

詳細參數

  • 型號：

    INA214BIRSWR

  • 制造商：

    Texas Instruments

  • 功能描述：

    IC CURRENT SHUNT MONITOR 10-UQFN

  • 功能描述：

    Revision B of existing INA214BIRSW

供應商型號品牌批號封裝庫存備注價格
24+
SC70-6
6000
美國德州儀器TEXASINSTRUMENTS原廠代理輝華拓展內地現
 詢價
TI(德州儀器)
24+
QFN-10(1
3022
深耕行業(yè)12年,可提供技術支持。
 詢價
TI
16+
UQFN
10000
原裝正品
 詢價
Texas Instruments
24+
10-UQFN(1.8x1.4)
53200
一級代理/放心采購
 詢價
TI(德州儀器)
2447
UQFN-10(1.8x1.4)
315000
3000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現貨,
 詢價
TI
20+
QFN-10
4854
就找我吧!--邀您體驗愉快問購元件!
 詢價
TI/德州儀器
23+
QFN
50000
全新原裝正品現貨,支持訂貨
 詢價
TI
22+
10UQFN
9000
原廠渠道,現貨配單
 詢價
TI/德州儀器
25+
UQFN-10
8880
原裝認準芯澤盛世！
 詢價
TI
23+
10UQFN
9000
原裝正品，支持實單
 詢價
更多INA214BIRSWR供應商 更新時間2025-7-28 15:08:00

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