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IRFD214

Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=0.45A)

VDSS=250V RDS(on)=2.0? ID=0.45A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

IRFD214

Power MOSFET

VDS(V)250 RDS(on)(Ω)VGS=10V2.0 Qg(Max.)(nC)8.2 Qgs(nC)1.8 Qgd(nC)4.5 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD214

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD214

Power MOSFET; ? Dynamic dV/dt rating\n? Repetitive avalanche rated\n? For automatic insertion\n\n\n\n;

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD214

Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=0.45A);

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRFD214_V01

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgene

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD214PBF

HEXFET Power MOSFET

VDSS=250V RDS(on)=2.0? ID=0.45A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

IRFD214PBF

Power MOSFET

VDS(V)250 RDS(on)(Ω)VGS=10V2.0 Qg(Max.)(nC)8.2 Qgs(nC)1.8 Qgd(nC)4.5 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFD214

  • 功能描述：

    MOSFET N-Chan 250V 0.45 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
INTERNATIONA
05+
原廠原裝
7016
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
IR
2016+
DIP-4
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
 詢價(jià)
IOR
24+
DIP-4P
68
詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
VISHAY
1809+
DIP-4
1675
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
IR-VISHAY
11+
DIP4
19300
原裝現(xiàn)貨
 詢價(jià)
Vishay Siliconix
22+
4DIP
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
IR
22+
DIP-4
8000
原裝正品支持實(shí)單
 詢價(jià)
Vishay Siliconix
23+
4DIP
9000
原裝正品，支持實(shí)單
 詢價(jià)
Vishay Siliconix
2022+
4-DIP(0.300
38550
詢價(jià)
更多IRFD214供應(yīng)商 更新時(shí)間2025-7-28 16:22:00

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