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INA214CIDCKT

絲?。?a target="_blank" title="Marking" href="/16g/marking.html">16G;Package:SC70;INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

1Features ?UpdatedformattomatchnewTIlayoutandflow. Tables,figuresandcross-referencesuseanew numberingsequencethroughoutthedocument. WideCommon-ModeRange:–0.3Vto26V ?OffsetVoltage:±35μV(Maximum,INA210) (EnablesShuntDropsof10-mVFull-Scale) ?Accuracy: –

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

INA214CIDCKT

Voltage Output, Low- or High-Side Measurement, Bidirectional

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

INA214CIDCKT

Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

INA214CIRSWR

VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

INA214CIRSWR

VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional,Zero-DriftSeries,Current-ShuntMonitors

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

INA214CIRSWR

INA21xVoltageOutput,Low-orHigh-SideMeasurement,Bidirectional,Zero-DriftSeries,Current-ShuntMonitors

1Features ?UpdatedformattomatchnewTIlayoutandflow. Tables,figuresandcross-referencesuseanew numberingsequencethroughoutthedocument. WideCommon-ModeRange:–0.3Vto26V ?OffsetVoltage:±35μV(Maximum,INA210) (EnablesShuntDropsof10-mVFull-Scale) ?Accuracy: –

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

INA214CIRSWT

VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional,Zero-DriftSeries,Current-ShuntMonitors

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

INA214CIRSWT

VoltageOutput,Low-orHigh-SideMeasurement,Bidirectional

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

IRFD214

PowerMOSFET(Vdss=250V,Rds(on)=2.0ohm,Id=0.45A)

VDSS=250V RDS(on)=2.0? ID=0.45A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.The4-pinDIPpackageisalow-costmachine-insertableca

IRF

International Rectifier

IRFD214

PowerMOSFET

VDS(V)250 RDS(on)(Ω)VGS=10V2.0 Qg(Max.)(nC)8.2 Qgs(nC)1.8 Qgd(nC)4.5 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

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24+
SOP-8
6000
美國(guó)德州儀器TEXASINSTRUMENTS原廠代理輝華拓展內(nèi)地現(xiàn)
詢價(jià)
TI(德州儀器)
2022+原裝正品
SC70-6
18000
支持工廠BOM表配單 公司只做原裝正品貨
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TI(德州儀器)
24+
SC-70-6
1083
深耕行業(yè)12年,可提供技術(shù)支持。
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Texas Instruments
24+
SC-70-6
53200
一級(jí)代理/放心采購(gòu)
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TI
20+
SC-70-6
500
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
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TI(德州儀器)
2021+
SC70-6
499
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TEXAS INSTRUMENTS
23+
SC-70-6
9600
全新原裝正品!一手貨源價(jià)格優(yōu)勢(shì)!
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TI(德州儀器)
23+
SC-70-6
9990
原裝正品,支持實(shí)單
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TI
na
88252
只做正品
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TI(德州儀器)
24+
SC-70-6
690000
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更多INA214CIDCKT供應(yīng)商 更新時(shí)間2025-7-28 15:08:00