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ADR3650BRMZ

Marking：G9；Package：MSOP；Precision, Micropower, High Current Output Voltage References

GENERALDESCRIPTION TheADR3625ADR3630ADR3650arelowpower,highprecision voltagereferencesthatfeatureamaximumtemperaturecoefficient of3ppm/°CfortheBgradeinan8-leadMSOP.Capableof sourcingupto70mA,theADR3625ADR3630ADR3650arean exceptionalreplacementtostandardlo

ADR3650BRMZ-R7

Marking：G9；Package：MSOP；Precision, Micropower, High Current Output Voltage References

GENERALDESCRIPTION TheADR3625ADR3630ADR3650arelowpower,highprecision voltagereferencesthatfeatureamaximumtemperaturecoefficient of3ppm/°CfortheBgradeinan8-leadMSOP.Capableof sourcingupto70mA,theADR3625ADR3630ADR3650arean exceptionalreplacementtostandardlo

BZD27C150P

Marking：G9；Voltage Regulator Diodes

Features ◇Silliconplanarzenerdiodes. ◇Lowprofilesurface-mountpackage. ◇Zenerandsurgecurrentspecification ◇Lowleakagecurrent ◇Excellentstability ◇Hightemperaturesolderingguaranteed:265℃/10seconds,atterminals

BZD27C150P

Marking：G9；Package：SOD-123FL；Voltage Regulator Diodes

Features ◇Silliconplanarzenerdiodes. ◇Lowprofilesurface-mountpackage. ◇Zenerandsurgecurrentspecification ◇Lowleakagecurrent ◇Excellentstability ◇Hightemperaturesolderingguaranteed:265℃/10seconds,atterminals

BZT52H-A10

Marking：G9；Package：SOD123F；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD123FsmallandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits ?Totalpowerdissipation:≤830mW ?Threetoleranceseries:±1,±2andapproximately±5 ?Wideworkingvoltagerange:nominal2.

BZT52H-A10-Q

Marking：G9；Package：SOD123F；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD123FsmallandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits ?Totalpowerdissipation:≤830mW ?Threetoleranceseries:±1,±2andapproximately±5 ?Wideworkingvoltagerange:nominal2.

EMG9

Marking：G9；Package：SOT-553；Emitter common (dual digital transistors)

Features 1)Built-InBiasingResistors,R1=R2=10kW. 2)TwoDTC114Echipsinonepackage. 3)Emitter(GND)-commontype. 4)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 5)Thebiasresistors

EMG9

Marking：G9；Package：SOT-553；NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1)Built-InBiasingResistors,R1=R2=10kW. 2)TwoDTC114Echipsinonepackage. 3)Emitter(GND)-commontype. 4)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 5)Thebiasresistors

FMG9A

Marking：G9；Package：SOT-753；Emitter common (dual digital transistors)

Features 1)Built-InBiasingResistors,R1=R2=10kW. 2)TwoDTC114Echipsinonepackage. 3)Emitter(GND)-commontype. 4)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 5)Thebiasresistors

FMG9A

Marking：G9；Package：SOT-753；NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1)Built-InBiasingResistors,R1=R2=10kW. 2)TwoDTC114Echipsinonepackage. 3)Emitter(GND)-commontype. 4)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 5)Thebiasresistors