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型號：ADR3650BRMZ；Package：MSOP；Precision, Micropower, High Current Output Voltage References

GENERAL DESCRIPTION The ADR3625ADR3630ADR3650 are low power, high precision voltage references that feature a maximum temperature coefficient of 3 ppm/°C for the B grade in an 8-lead MSOP. Capable of sourcing up to 70 mA, the ADR3625ADR3630ADR3650 are an exceptional replacement to standard lo

文件：3.98401 Mbytes 頁數：26 Pages

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亞德諾

型號：ADR3650BRMZ-R7；Package：MSOP；Precision, Micropower, High Current Output Voltage References

GENERAL DESCRIPTION The ADR3625ADR3630ADR3650 are low power, high precision voltage references that feature a maximum temperature coefficient of 3 ppm/°C for the B grade in an 8-lead MSOP. Capable of sourcing up to 70 mA, the ADR3625ADR3630ADR3650 are an exceptional replacement to standard lo

文件：3.98401 Mbytes 頁數：26 Pages

AD

亞德諾

型號：BZD27C150P；Voltage Regulator Diodes

Features ◇ Sillicon planar zener diodes. ◇ Low profile surface-mount package. ◇ Zener and surge current specification ◇ Low leakage current ◇ Excellent stability ◇ High temperature soldering guaranteed: 265℃/10 seconds, at terminals

文件：2.05751 Mbytes 頁數：4 Pages

LUGUANG

魯光電子

型號：BZD27C150P；Package：SOD-123FL；Voltage Regulator Diodes

Features ◇ Sillicon planar zener diodes. ◇ Low profile surface-mount package. ◇ Zener and surge current specification ◇ Low leakage current ◇ Excellent stability ◇ High temperature soldering guaranteed: 265℃/10 seconds, at terminals

文件：742.14 Kbytes 頁數：4 Pages

LUGUANG

魯光電子

型號：BZT52H-A10；Package：SOD123F；Voltage regulator diodes

1. General description General-purpose Zener diodes in an SOD123F small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits ? Total power dissipation: ≤ 830 mW ? Three tolerance series: ±1 , ±2 and approximately ±5 ? Wide working voltage range: nominal 2.

文件：333.71 Kbytes 頁數：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

型號：BZT52H-A10-Q；Package：SOD123F；Voltage regulator diodes

1. General description General-purpose Zener diodes in an SOD123F small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits ? Total power dissipation: ≤ 830 mW ? Three tolerance series: ±1 , ±2 and approximately ±5 ? Wide working voltage range: nominal 2.

文件：314.74 Kbytes 頁數：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

型號：EMG9；Package：SOT-553；NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kW. 2) Two DTC114E chips in one package. 3) Emitter(GND)-common type. 4) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 5) The bias resistors

文件：463.57 Kbytes 頁數：8 Pages

ROHM

羅姆

型號：EMG9；Package：SOT-553；Emitter common (dual digital transistors)

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kW. 2) Two DTC114E chips in one package. 3) Emitter(GND)-common type. 4) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 5) The bias resistors

文件：76.33 Kbytes 頁數：2 Pages

ROHM

羅姆

型號：FMG9A；Package：SOT-753；Emitter common (dual digital transistors)

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kW. 2) Two DTC114E chips in one package. 3) Emitter(GND)-common type. 4) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 5) The bias resistors

文件：76.33 Kbytes 頁數：2 Pages

ROHM

羅姆

型號：FMG9A；Package：SOT-753；NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kW. 2) Two DTC114E chips in one package. 3) Emitter(GND)-common type. 4) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 5) The bias resistors

文件：463.57 Kbytes 頁數：8 Pages

ROHM

羅姆