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G9

型號：ADR3650BRMZ；Package：MSOP；Precision, Micropower, High Current Output Voltage References

GENERALDESCRIPTION TheADR3625ADR3630ADR3650arelowpower,highprecision voltagereferencesthatfeatureamaximumtemperaturecoefficient of3ppm/°CfortheBgradeinan8-leadMSOP.Capableof sourcingupto70mA,theADR3625ADR3630ADR3650arean exceptionalreplacementtostandardlo

G9

型號：ADR3650BRMZ-R7；Package：MSOP；Precision, Micropower, High Current Output Voltage References

GENERALDESCRIPTION TheADR3625ADR3630ADR3650arelowpower,highprecision voltagereferencesthatfeatureamaximumtemperaturecoefficient of3ppm/°CfortheBgradeinan8-leadMSOP.Capableof sourcingupto70mA,theADR3625ADR3630ADR3650arean exceptionalreplacementtostandardlo

G9

型號：BZD27C150P；Voltage Regulator Diodes

Features ◇Silliconplanarzenerdiodes. ◇Lowprofilesurface-mountpackage. ◇Zenerandsurgecurrentspecification ◇Lowleakagecurrent ◇Excellentstability ◇Hightemperaturesolderingguaranteed:265℃/10seconds,atterminals

G9

型號：BZD27C150P；Package：SOD-123FL；Voltage Regulator Diodes

Features ◇Silliconplanarzenerdiodes. ◇Lowprofilesurface-mountpackage. ◇Zenerandsurgecurrentspecification ◇Lowleakagecurrent ◇Excellentstability ◇Hightemperaturesolderingguaranteed:265℃/10seconds,atterminals

G9

型號：BZT52H-A10；Package：SOD123F；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD123FsmallandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits ?Totalpowerdissipation:≤830mW ?Threetoleranceseries:±1,±2andapproximately±5 ?Wideworkingvoltagerange:nominal2.

G9

型號：BZT52H-A10-Q；Package：SOD123F；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD123FsmallandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits ?Totalpowerdissipation:≤830mW ?Threetoleranceseries:±1,±2andapproximately±5 ?Wideworkingvoltagerange:nominal2.

G9

型號：EMG9；Package：SOT-553；Emitter common (dual digital transistors)

Features 1)Built-InBiasingResistors,R1=R2=10kW. 2)TwoDTC114Echipsinonepackage. 3)Emitter(GND)-commontype. 4)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 5)Thebiasresistors

G9

型號：EMG9；Package：SOT-553；NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1)Built-InBiasingResistors,R1=R2=10kW. 2)TwoDTC114Echipsinonepackage. 3)Emitter(GND)-commontype. 4)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 5)Thebiasresistors

G9

型號：FMG9A；Package：SOT-753；Emitter common (dual digital transistors)

Features 1)Built-InBiasingResistors,R1=R2=10kW. 2)TwoDTC114Echipsinonepackage. 3)Emitter(GND)-commontype. 4)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 5)Thebiasresistors

G9

型號：FMG9A；Package：SOT-753；NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1)Built-InBiasingResistors,R1=R2=10kW. 2)TwoDTC114Echipsinonepackage. 3)Emitter(GND)-commontype. 4)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 5)Thebiasresistors