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G115P06

型號(hào):G115P06T;Package:TO-220;P-Channel Enhancement Mode Power MOSFET

Description TheG115P06Tusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G11

型號(hào):G11S;Package:SOP-8;P-Channel Enhancement Mode Power MOSFET

Description TheG11Susesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G120N02

型號(hào):G120N02D32;Package:DFN3X3-8LDual;DUAL N-Channel Enhancement Mode Power MOSFET

Description TheG120N02D32usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G120N03

型號(hào):G120N03D3;Package:DFN3X3-8L;N-Channel Enhancement Mode Power MOSFET

Description TheG120N03D3usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G120N03

型號(hào):G120N03D32;Package:DFN3X3-8LDual;DUAL N-Channel Enhancement Mode Power MOSFET

Description TheG120N03D32usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G120P03

型號(hào):G120P03S2;Package:SOP-8Dual;DUAL P-Channel Enhancement Mode Power MOSFET

Description TheG120P03S2usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G120P06

型號(hào):G120P06M;Package:TO-263;P-Channel Enhancement Mode Power MOSFET

Description TheG120P06Musesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G120P06

型號(hào):G120P06T;Package:TO-220;P-Channel Enhancement Mode Power MOSFET

Description TheG120P06Tusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G12N65

型號(hào):G12N65F;Package:TO-220F;N-Channel Enhancement Mode Power MOSFET

Description ThisadvancedMOSFETfamilyhasoptimizedon-state resistance,andalsoprovidessuperiorswitching performanceandhigheravalancheenergystrength.This devicefamilyissuitableforhighefficiencyswitchmode powersupplies. Application lLEDpowersupplies lCellPhoneC

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G12P03

型號(hào):G12P03D3;Package:DFN3X3-8L;P-Channel Enhancement Mode Power MOSFET

Description TheG12P03D3usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

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