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BC847BHZG

Marking:G1F;Package:SOT-23;NPN General purpose transistor

Features 1)BVCEO>45V(IC=1mA) 2)ComplementstheBC857BHZG. Application AUDIOFREQUENCYSMALLSIGNALAMPLIFIER

ROHMRohm

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BC847BU3

Marking:G1F;Package:SOT-323;General purpose small signal amplifier

Features 1)BVCEO>45V(IC=1mA) 2)ComplementstheBC857B/BC857BU3. Application GENERALPURPOSESMALLSIGNALAMPLIFIER

ROHMRohm

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BC847BU3HZG

Marking:G1F;Package:SOT-323;NPN General purpose transistor

Features 1)BVCEO>45V(IC=1mA) 2)ComplementstheBC857BU3HZG. Application AUDIOFREQUENCYSMALLSIGNALAMPLIFIER

ROHMRohm

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BFS20

Marking:G1*;Package:SOT-23;NPN medium frequency transistor

DESCRIPTION NPNmediumfrequencytransistorinaSOT23plasticpackage. FEATURES ?Lowcurrent(max.25mA) ?Lowvoltage(max.20V) ?Verylowfeedbackcapacitance(typ.350fF). APPLICATIONS ?IFandVHFapplicationsinthickandthin-filmcircuits.

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

DMN10H170SFGQ-13

Marking:G17;Package:PowerDI3333-8;N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8

Features ?100UnclampedInductiveSwitching,TestinProduction– Ensuresmorereliableandrobustendapplication ?LowRDS(ON)–Ensuresonstatelossesareminimized ?Smallformfactorthermallyefficientpackageenableshigher densityendproducts ?Occupiesjust33oftheboardareao

DIODESDiodes Incorporated

美臺半導(dǎo)體

DMN10H170SFGQ-7

Marking:G17;Package:PowerDI3333-8;N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8

Features ?100UnclampedInductiveSwitching,TestinProduction– Ensuresmorereliableandrobustendapplication ?LowRDS(ON)–Ensuresonstatelossesareminimized ?Smallformfactorthermallyefficientpackageenableshigher densityendproducts ?Occupiesjust33oftheboardareao

DIODESDiodes Incorporated

美臺半導(dǎo)體

DTB113ZK

Marking:G11;Package:SOT-346;Digital transistors (built-in resistors)

Feature 1)Built-inbiasresistorsenablethe configurationofaninvertercircuit withoutconnectingexternalinput resistors(seeequivalentcircuit). 2)Thebiasresistorsconsistofthin filmresistorswithcompleteisolationto allowpositivebiasingofthe input.Th

ROHMRohm

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DTB113ZK

Marking:G11;Package:SOT-346;PNP -500mA -50V Digital Transistors (Bias Resistor Built-in Transistors)

Feature 1)Built-inbiasresistorsenablethe configurationofaninvertercircuit withoutconnectingexternalinput resistors(seeequivalentcircuit). 2)Thebiasresistorsconsistofthin filmresistorswithcompleteisolationto allowpositivebiasingofthe input.Th

ROHMRohm

羅姆羅姆半導(dǎo)體集團

EMG11

Marking:G11;Package:EMT5;Emitter common (dual digital transistors)

Emittercommon(dualdigitaltransistors) Features 1)TwoDTA123JschipsinaEMTorUMTorSMTpackage.

ROHMRohm

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FMG11A

Marking:G11;Package:SMT5;Emitter common (dual digital transistors)

Emittercommon(dualdigitaltransistors) Features 1)TwoDTA123JschipsinaEMTorUMTorSMTpackage.

ROHMRohm

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詳細參數(shù)

  • 型號:

    G1

  • 制造商:

    GULFSEMI

  • 制造商全稱:

    Gulf Semiconductor

  • 功能描述:

    SINTERED GLASS JUNCTION AVALANCHE RECTIFIER VOLTAGE:1000V

  • CURRENT:

    1.5A

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更多G1供應(yīng)商 更新時間2025-7-27 10:01:00