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G12

型號：FMG12；Package：SMT6；Emitter common(dual digital transistors)

Features 1)IncludetwoDTC323TtransistorsinasingleSMTpackage. 2)LowVCE(sat).Idealformutingcircuit. 3)CanbeusedwithIC=600mA

G1002

型號：G1002；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description TheG1002usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G1002

型號：G1002A；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description TheG1002Ausesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

G1002L

型號：G1002L；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description TheG1002Lusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G1003A

型號：G1003A；Package：SOT23-3L；N-Channel Enhancement MOSFET

Description TheG1003Ausesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. ItisESDprotected. GeneralFeatures HighdensitycelldesignforultralowRdson Fullycharacterizedavalanchevolta

G1003A

型號：G1003A；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description TheG1003Ausesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G1003B

型號：G1003B；Package：SOT-23-3；N-Channel Enhancement Mode Power MOSFET

Description TheG1003Busesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G1005

型號：G1005；Package：TO-92；PWM applications

TheG1005usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas4.5V.Thisdeviceissuitableforuseasa loadswitchorinPWMapplications. Application ●PWMapplications ●Loadswitch ●Powermanagement

G1006

型號：G1006LE；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description TheG1006LEusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G1007

型號：G1007；Package：SOP-8；Power switching application

GeneralDescription TheG1007combinesadvancedtrench MOSFETtechnologywithalowresistancepackageto provideextremelylowRDS(ON).Thisdeviceisidealfor powerswitchingapplicationandLEDbacklighting. Application ●Powerswitchingapplication ●LEDbacklighting