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FGD3325G2

型號(hào):FGD3325G2-F085;Package:TO252;EcoSPARK?2 330mJ 250V, N-Channel Ignition IGBT

Features -SCISEnergy=330mJatTJ=25oC -LogicLevelGateDrive -QualifiedtoAECQ101 -RoHSCompliant Applications -AutomotivelgnitionCoilDriverCircuits -CoilOnPlugApplications

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FGD3440G2

型號(hào):FGD3440G2-F085;Package:TO-252AA;EcoSPARK?2 335mJ, 400V, N-Channel Ignition IGBT

Features -SCISEnergy=335mJatTJ=25oC -LogicLevelGateDrive -QualifiedtoAECQ101 -RoHSCompliant Applications -AutomotivelgnitionCoilDriverCircuits -CoilOnPlugApplications

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FGD3440G2

型號(hào):FGD3440G2-F085V;Package:DPAK;EcoSPARK 2 N-Channel Ignition IGBT 335 mJ, 400 V

Features ?SCISEnergy=335mJatTJ=25°C ?LogicLevelGateDrive ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant Applications ?AutomotiveIgnitionCoilDriverCircuits ?HighCurrentIgnitionSystem ?CoilonPlugApplication

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FGH20N60SFD

型號(hào):FGH20N60SFDTU;Package:TO-247;IGBT - Field Stop 600 V, 20 A

Description UsingNovelFieldStopIGBTTechnology,ONSemiconductor’s newseriesofFieldStopIGBTsoffertheoptimumperformancefor AutomotiveChargers,Inverter,andotherapplicationswherelow conductionandswitchinglossesareessential. Features ?HighCurrentCapability ?LowS

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FGH20N60SFDTU

型號(hào):FGH20N60SFDTU-F085;Package:TO-247;IGBT - Field Stop 600 V, 20 A

Description UsingNovelFieldStopIGBTTechnology,ONSemiconductor’s newseriesofFieldStopIGBTsoffertheoptimumperformancefor AutomotiveChargers,Inverter,andotherapplicationswherelow conductionandswitchinglossesareessential. Features ?HighCurrentCapability ?LowS

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FGH30S130P

型號(hào):FGH30S130P;Package:TO-247;1300 V, 30 A Shorted-anode IGBT

Features ?HighSpeedSwitching ?LowSaturationVoltage:VCE(sat)=1.75V@IC=30A ?HighInputImpedance ?RoHSCompliant GeneralDescription Usingadvancedfieldstoptrenchandshorted-anodetechnology,Fairchild’sshorted-anodetrenchIGBTsoffersuperiorconductionandswitching

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FGH40N60SFD

型號(hào):FGH40N60SFDTU;Package:TO-247;IGBT - Field Stop 600 V, 40 A

Description UsingNovelFieldStopIGBTTechnology,ONSemiconductor’s newseriesofFieldStopIGBTsoffertheoptimumperformancefor AutomotiveChargers,Inverter,andotherapplicationswherelow conductionandswitchinglossesareessential. Features ?HighCurrentCapability ?LowS

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FGH40N60SFDTU

型號(hào):FGH40N60SFDTU-F085;Package:TO-247;IGBT - Field Stop 600 V, 40 A

Description UsingNovelFieldStopIGBTTechnology,ONSemiconductor’s newseriesofFieldStopIGBTsoffertheoptimumperformancefor AutomotiveChargers,Inverter,andotherapplicationswherelow conductionandswitchinglossesareessential. Features ?HighCurrentCapability ?LowS

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FGH40N60SMD

型號(hào):FGH40N60SMD-F085;Package:TO-247-3;IGBT - Field Stop 600 V, 40 A

Description UsingNovelFieldStopIGBTTechnology,ONSemiconductor’s newseriesofFieldStopIGBTsoffertheoptimumperformancefor AutomotiveChargers,Inverter,andotherapplicationswherelow conductionandswitchinglossesareessential. Features ?MaximumJunctionTemperature:TJ

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FGH40N60UFD

型號(hào):FGH40N60UFDTU;Package:TO-247;IGBT - Field Stop 600 V, 40 A

Description UsingnovelFieldStopIGBTtechnology,ONSemiconductor’s fieldstopIGBTsoffertheoptimumperformanceforsolarinverter, UPS,welder,microwaveoven,telecom,ESSandPFCapplications wherelowconductionandswitchinglossesareessential. Features ?HighCurrentCapability

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

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24+
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3000
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20+
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2022+
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