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絲?。?strong>FG；WE-TVSP Power TVS Diode

General Information: It is recommended that the temperature of the component does not exceed +150°C under worst case conditions Operating Temperature -65 up to +150 °C Storage Conditions (in original packaging)

文件：538.25 Kbytes 頁數(shù)：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團

絲?。?strong>FG；Package：CSP-4；HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR

Features · Low Dropout Voltage at IOUT=100mA: 150mV Typical (Except 1.2V, 1.3V and 1.5V Versions) · Low Standby Current: 0.1μA Typical · Low Quiescent Current: 25μA Typical · High Ripple Rejection: 70dB Typical （f=1kHz） · Output Current: More Than 200mA (300mA Limit) · Extremely Low Noise:

文件：1.19367 Mbytes 頁數(shù)：29 Pages

DIODES

美臺半導體

絲印：FG；Package：SOT23；NPN Darlington transistor

1. General description NPN Darlington transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: BCV26 2. Features and benefits ? Medium current of 500 mA ? Low voltage of 60 V ? High DC current gain of minimum 2000 3. Applications ? Preamplif

文件：212.34 Kbytes 頁數(shù)：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

絲?。?strong>FG；Package：SOT-23；NPN Darlington Amplifier Transistor

FEATURES ● Complementary to BCV26,BCV46. ● High collector current. ● High current gain. ● For general AF applications. ● Complementary types:BCV26,BCV46 APPLICATIONS ● NPN silicon darlington transistor.

文件：770.09 Kbytes 頁數(shù)：4 Pages

LUGUANG

魯光電子

絲印：FG；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES High Collector Current High Current Gain

文件：2.8621 Mbytes 頁數(shù)：4 Pages

DGNJDZ

南晶電子

絲印：FG；Package：SOT23；NPN Darlington transistor

1. General description NPN Darlington transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: BCV26 2. Features and benefits ? Medium current of 500 mA ? Low voltage of 60 V ? High DC current gain of minimum 2000 ? Qualified according to AEC-Q

文件：186.4 Kbytes 頁數(shù)：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

絲?。?strong>Fg；Package：SSOP3；Standard CMOS Voltage Detector IC

Description ROHM’s BD48□□G/FVE and BD49□□G/FVE series are highly accurate, low current consumption reset IC series. The lineup was established with tow output types (Nch open drain and CMOS output) and detection voltages range from 2.3V to 6.0V in increments of 0.1V, so that the series may be sel

文件：433.03 Kbytes 頁數(shù)：18 Pages

ROHM

羅姆

絲?。?strong>Fg；Package：SSOP3；Standard CMOS Voltage Detector IC

Description ROHM’s BD48□□G/FVE and BD49□□G/FVE series are highly accurate, low current consumption reset IC series. The lineup was established with tow output types (Nch open drain and CMOS output) and detection voltages range from 2.3V to 6.0V in increments of 0.1V, so that the series may be sel

文件：433.03 Kbytes 頁數(shù)：18 Pages

ROHM

羅姆

絲印：Fg；Package：SSOP3；Standard CMOS Voltage Detector IC

Description ROHM’s BD48□□G/FVE and BD49□□G/FVE series are highly accurate, low current consumption reset IC series. The lineup was established with tow output types (Nch open drain and CMOS output) and detection voltages range from 2.3V to 6.0V in increments of 0.1V, so that the series may be sel

文件：507.55 Kbytes 頁數(shù)：18 Pages

ROHM

羅姆

絲?。?strong>Fg；Package：SSOP3；Standard CMOS Voltage Detector IC

Description ROHM’s BD48□□G/FVE and BD49□□G/FVE series are highly accurate, low current consumption reset IC series. The lineup was established with tow output types (Nch open drain and CMOS output) and detection voltages range from 2.3V to 6.0V in increments of 0.1V, so that the series may be sel

文件：507.55 Kbytes 頁數(shù)：18 Pages

ROHM

羅姆