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H02N60SF

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H02N60SI

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H02N60SJ

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

M02N60

NChannelMOSFET

FEATURE RobustHighVoltageTemination. AvalancheEnergySpecified Source-toDrainDiodeRecoveryTimeComparabletoaDiscreteFastRecoveryDiode DiodeisCharacterizedforUseinBridgeCircurits IDSSandVDS(on)SpecifiedatElevatedTemperature

STANSON

Stanson Technology

M02N60B

NChannelMOSFET

FEATURE RobustHighVoltageTemination. AvalancheEnergySpecified Source-toDrainDiodeRecoveryTimeComparabletoaDiscreteFastRecoveryDiode DiodeisCharacterizedforUseinBridgeCircurits IDSSandVDS(on)SpecifiedatElevatedTemperature

STANSON

Stanson Technology

NDD02N60Z

N-ChannelPowerMOSFET600V,4.8

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDD02N60Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.2A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDF02N60Z

N-ChannelPowerMOSFET600V,4.0

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDF02N60Z

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDF02N60Z

N-ChannelPowerMOSFET600V,4.8

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

技術(shù)參數(shù)

  • Channel：

    Single N

  • BVDSS(V)：

    600

  • VGS(±V)：

    30

  • ID(A)：

    2

  • RDS(ON)(10V) Max.(mΩ)：

    5000

  • RDS(ON)(5V) Max.(mΩ)：

    ?

  • RDS(ON)(4.5V) Max.(mΩ)：

    ?

  • RDS(ON)(2.5V) Max.(mΩ)：

    ?

  • Qg(10V)Typ.(nC)：

    8.2

  • CissTyp.(pF)：

    365

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EMC
21+
TO-252
10000
全新原裝 公司現(xiàn)貨 價(jià)格優(yōu)
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EMC
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
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EMC
10+
TO-252
880000
明嘉萊只做原裝正品現(xiàn)貨
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EMC
24+
NA/
4771
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
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EMC
23+
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7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
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EMC
23+
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7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
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EMC
24+
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60000
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EMC
2450+
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8850
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
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EMC
23+
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10000
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EMC
22+
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100000
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更多EMD02N60A供應(yīng)商 更新時(shí)間2025-7-27 9:30:00

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