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H02N60SF

N-Channel Power Field Effect Transistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H02N60SF

High Voltage MOSFET;

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H02N60SI

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H02N60SJ

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

M02N60

NChannelMOSFET

FEATURE RobustHighVoltageTemination. AvalancheEnergySpecified Source-toDrainDiodeRecoveryTimeComparabletoaDiscreteFastRecoveryDiode DiodeisCharacterizedforUseinBridgeCircurits IDSSandVDS(on)SpecifiedatElevatedTemperature

STANSON

Stanson Technology

M02N60B

NChannelMOSFET

FEATURE RobustHighVoltageTemination. AvalancheEnergySpecified Source-toDrainDiodeRecoveryTimeComparabletoaDiscreteFastRecoveryDiode DiodeisCharacterizedforUseinBridgeCircurits IDSSandVDS(on)SpecifiedatElevatedTemperature

STANSON

Stanson Technology

NDD02N60Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.2A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDD02N60Z

N-ChannelPowerMOSFET600V,4.8

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDF02N60Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.4A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDF02N60Z

N-ChannelPowerMOSFET600V,4.0

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

技術(shù)參數(shù)

  • Channel：

    N

  • VDSS(V)：

    600

  • ID(A)：

    2

  • VGS(V)：

    ±30

  • RDS(on)Max.(ohm)：

    5

  • RDS(on)@VGS(V)：

    10

  • RDS(on)@ID(A)：

    1

  • RoHS(Note1)：

    PF

  • Status(Note2)：

    M

供應(yīng)商型號品牌批號封裝庫存備注價格
H
22+
TO-220F
6000
十年配單,只做原裝
 詢價
H
23+
TO-220F
6000
原裝正品，支持實單
 詢價
H
22+
TO-220F
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
H
25+
TO-TO-220F
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
華昕
23+
TO251
28888
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
24+
N/A
48000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
A
24+
b
8
詢價
SOT-163
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價
FUJ
ROHS
13352
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
HUMPHREY
新
3
全新原裝 貨期兩周
 詢價
更多H02N60SF供應(yīng)商 更新時間2025-7-27 14:02:00

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