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H02N60SJ中文資料華昕數(shù)據(jù)手冊PDF規(guī)格書

H02N60SJ
廠商型號

H02N60SJ

功能描述

N-Channel Power Field Effect Transistor

文件大小

77.67 Kbytes

頁面數(shù)量

6

生產(chǎn)廠商

HSMC

中文名稱

華昕

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊

下載地址一下載地址二

更新時(shí)間

2025-8-6 17:48:00

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H02N60SJ規(guī)格書詳情

描述 Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls,

these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients.

特性 Features

?Robust High Voltage Termination

?Avalanc he Energy Specified

?Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

?Diode is Characterized for Use in Bridge Circuits

?IDSS and VDS(on) Specified at Elevated Temperature

產(chǎn)品屬性

  • 型號:

    H02N60SJ

  • 制造商:

    HSMC

  • 制造商全稱:

    HSMC

  • 功能描述:

    N-Channel Power Field Effect Transistor

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