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H02N60SE

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H02N60SF

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H02N60SI

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H02N60SJ

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

M02N60

NChannelMOSFET

FEATURE RobustHighVoltageTemination. AvalancheEnergySpecified Source-toDrainDiodeRecoveryTimeComparabletoaDiscreteFastRecoveryDiode DiodeisCharacterizedforUseinBridgeCircurits IDSSandVDS(on)SpecifiedatElevatedTemperature

STANSON

Stanson Technology

M02N60B

NChannelMOSFET

FEATURE RobustHighVoltageTemination. AvalancheEnergySpecified Source-toDrainDiodeRecoveryTimeComparabletoaDiscreteFastRecoveryDiode DiodeisCharacterizedforUseinBridgeCircurits IDSSandVDS(on)SpecifiedatElevatedTemperature

STANSON

Stanson Technology

NDD02N60Z

N-ChannelPowerMOSFET600V,4.8

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDD02N60Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.2A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDF02N60Z

N-ChannelPowerMOSFET600V,4.0

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDF02N60Z

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

技術(shù)參數(shù)

  • Channel：

    Single N

  • BVDSS(V)：

    600

  • VGS(±V)：

    20

  • ID(A)：

    2

  • RDS(ON)(10V) Max.(mΩ)：

    4000

  • RDS(ON)(5V) Max.(mΩ)：

    ?

  • RDS(ON)(4.5V) Max.(mΩ)：

    ?

  • RDS(ON)(2.5V) Max.(mΩ)：

    ?

  • Qg(10V)Typ.(nC)：

    8.6

  • CissTyp.(pF)：

    399

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
EXCELLIANCE
17+
QFN
200
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
Displaytech
24+
SMD
17900
顯示開發(fā)工具
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Displaytech
2022+
原廠原包裝
6800
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
 詢價(jià)
EMC
23+
DFN5*6
50000
全新原裝正品現(xiàn)貨,支持訂貨
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24+
NA/
3290
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
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NK/南科功率
2025+
EDFN5*6
986966
國產(chǎn)
 詢價(jià)
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2511
EDFN5X6
360000
電子元器件采購降本 30%!盈慧通原廠直采,砍掉中間差價(jià)
 詢價(jià)
EMC
SOP
7880
原盒原包裝現(xiàn)貨原裝假一罰十價(jià)優(yōu)
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E
TO-252
22+
6000
十年配單,只做原裝
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EMB
新年份
TO-252
33288
原裝正品現(xiàn)貨,實(shí)單帶TP來談!
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更多EMB02N60CSB供應(yīng)商 更新時(shí)間2025-7-28 18:50:00

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