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2SD2498

Marking：D2498；Package：2-16E3A；NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

HORIZONTALDEFLECTIONOUTPUTFORHIGH RESOLUTIONDISPLAY,COLORTV HIGHSPEEDSWITCHINGAPPLICATIONS HighVoltage:VCBO=1500V LowSaturationVoltage:VCE(sat)=5V(Max.) HighSpeed:tf=0.4μs(Typ.) CollectorMetal(Fin)isFullyCoveredwithMoldResin HORI

2SD2583

Marking：D2583；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

Features LowVce HighDCCurrentGain

2SD2583-TU

Marking：D2583；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

Features LowVce HighDCCurrentGain

2SK3430-Z

Marking：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

?FEATURES ?WithTO-263(D2PAK)packaging ?Highspeedswitching ?Lowgateinputresistance ?Standardlevelgatedrive ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Powersupply ?Switchi

74LVC1GX04DCKTG4

Marking：D25；Package：SC70；SN74LVC1GX04 Crystal Oscillator Driver

1Features 1?AvailableinTexasInstrumentsNanoStar?and NanoFree?Packages ?Supports5-VVCCOperation ?InputsAcceptVoltagesto5.5V ?OneUnbufferedInverter(SN74LVC1GU04)and OneBufferedInverter(SN74LVC1G04) ?SuitableforCommonlyUsedClockFrequencies: –15kHz,3.58MHz,

75N75

Marking：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

?DESCRIPTION ?DrainCurrentID=75A@TC=25℃ ?DrainSourceVoltage- :VDSS=75V(Min) ?FastSwitchingSpeed ?APPLICATIONS ?Generalpurposepoweramplifier

AAT4901IJS-1-T1

Marking：D2RYY；Package：SC70JW-8；Buffered Power Full Bridge

Features ?VINRange:2.0V–5.5V ?RDS(ON): ??High-side240mΩ ??Low-side200mΩ ?Break-Before-MakeShoot–ThroughProtection ?4Options ??SingleControlInputwithEnable ??TwoLogicVersions ??DualControlInputwithBrakeFunction ??DualHalf-bridge ?LowQuiescentCurrent: ??10μA(m

AOB11S60

Marking：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=11A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.399Ω(Max) ?100avalanchetested ?MinimumLot-to

AOB11S60

Marking：D2PAK；Package：TO-263；N-Channel 650 V (D-S) MOSFET

FEATURES ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Telecommunications -Serverandtelecompowersupplies ?Light

AOB11S60L

Marking：D2PAK；Package：TO-263；N-Channel 650 V (D-S) MOSFET

FEATURES ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Telecommunications -Serverandtelecompowersupplies ?Light