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SOD4002

Marking：D2；Package：SOD-123FL；Surface Mount General Purpose Silicon Rectifiers

2SD2097

Marking：D2097；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES LowVCE(sat).VCE(sat)=0.25V(Typ.)(IC/IB=4A/0.1A) ExcellentDccurrentgaincharacteristics

2SD2097-TA

Marking：D2097；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES LowVCE(sat).VCE(sat)=0.25V(Typ.)(IC/IB=4A/0.1A) ExcellentDccurrentgaincharacteristics

2SD2118

Marking：D2118；Package：SOT-428；Low VCE(sat) Transistor(Strobe flash)

Features 1)LowVCE(sat). VCE(sat)=0.25V(Typ.) (IC/IB=4A/0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe 2SB1386/2SB1412/2SB1326/2SB1436. Structure Epitaxialplanartype NPNsilicontransistor

2SD2136

Marking：D2136；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES HighForwardCurrentTransferRatiohFEWhichhas SatisfactoryLinearity. LowCollector-EmitterSaturationVoltageVCE(sat) AllowingSupplywiththeRadialTaping

2SD2136-TU

Marking：D2136；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES HighForwardCurrentTransferRatiohFEWhichhas SatisfactoryLinearity. LowCollector-EmitterSaturationVoltageVCE(sat) AllowingSupplywiththeRadialTaping

2SD2137A

Marking：D2137A；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES HighDCCurrentGain LowCollectortoEmitterSaturationVoltageVCE(sat) AllowingAutomaticInsertionwithRadialTaping

2SD2143

Marking：D2143；Package：SOT-428；Medium Power Transistor(Motor, Relay drive) (60?10V, 2A)

Features 1)Built-inzenerdiodebetweencollectorandbase. 2)StrongprotectionagainstreversesurgesduetoLloads. 3)Built-inresistorbetweenbaseandemitter. 4)Built-indamperdiode.

2SD2152

Marking：D2152；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES HighDCCurrentGain LowSaturationMediumCurrentApplication

2SD2152-TA

Marking：D2152；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES HighDCCurrentGain LowSaturationMediumCurrentApplication