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AOD2922

Marking：D2922；Package：TO-252；100V N-Channel MOSFET

Application ?SynchronusRectificationinDC/DCandAC/DCConverters ?IsolatedDC/DCConvertersinTelecomandIndustrial ?VDS(V)=100V ?ID=7A(VGS=10V) ?RDS(ON)

BD2311NVX-CE2

Marking：D2311C；Package：SSON06RX2020；Single-Channel Ultra-Fast Gate Driver For Automotive

Features ?AEC-Q100Qualified(Note1) ?GateDriverVoltageRange4.5Vto5.5V ?MinimumInputPulseWidth1.25ns(220pFload) ?TypicalRiseTime0.65ns(220pFload) ?TypicalFallTime0.70ns(220pFload) ?Built-inUndervoltageLockout(UVLO)betweenVCC andGND ?Invertingand

BD2320UEFJ-LA

Marking：D2320U；Package：HTSOP-J8；High Frequency High-Side and Low-Side Driver

GeneralDescription Thisistheproductguaranteeslongtimesupportin industrialmarket. BD2320EFJ-LAandBD2320UEFJ-LAarethe100V maximumvoltageHigh-SideandLow-Sidegatedrivers whichcandriveexternalNch-FETusingthebootstrap method.Thedriverincludesa100Vbootstrapdiode

BT138B-600E

Marking：D2PAK；Package：TO-263；isc Thyristors

DESCRIPTION ?WithTO-263(D2PAK)packaging ?Operatingin4quadrants ?Highcommutationcapability ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS ?Switchingapplications ?Phasecontrol ?Staticswitchingoninductiveorresistiveload

BUK7675-55A

Marking：D2PAK；Package：TO-263；N-Channel 60 V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Logic-LevelGateDrive ?FastSwitching ?ComplianttoRoHSDirective2002/95/EC

BUK9635-55A

Marking：D2PAK；Package：TO-263；N-Channel 60 V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Logic-LevelGateDrive ?FastSwitching ?ComplianttoRoHSDirective2002/95/EC

CDBD2SC6650-G

Marking：D2SC6650；Package：TO-263；Silicon Carbide Power Schottky Diode

Features -Ratedto650Vat6Amps -Shortrecoverytime. -Highspeedswitchingpossible. -Temperatureindependentswitchingbehaviour. -Hightemperatureoperation. -Highfrequencyoperation. -PositivetemperaturecoefficientonVF.

CDBHA20100-HF

Marking：D20SAL；Package：TO-277B；SMD Schottky Barrier Rectifiers

Features -Metalsiliconjunction,majoritycarrierconduction. -Highforwardsurgecurrentcapability. -Hightemperaturesolderingguaranteed: 260°C/10seconds. -lowforwardvoltagedrop.

CDBHA20120-HF

Marking：D20SBL；Package：TO-277B；SMD Schottky Barrier Rectifiers

Features -Metalsiliconjunction,majoritycarrierconduction. -Highsurgecapability. -Hightemperaturesolderingguaranteed: 260°C/10seconds. -Highcurrentcapability,lowforwardvoltagedrop.

CDBHA20200-HF

Marking：D20SDL；Package：TO-277B；SMD Schottky Barrier Rectifiers

Features -Metalsiliconjunction,majoritycarrierconduction. -Highforwardsurgecurrentcapability. -Hightemperaturesolderingguaranteed: 260°C/10seconds. -Robustguardingforovervoltageprotection. -Lowforwardvoltagedrop.