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B1D

型號：TMAG5231B1DQDMRR；Package：X2SON；TMAG5231 Low-Power, Hall Effect Switch

1Features ?Lowpowerconsumption: –10-Hzversions:1.3μAat3V –20-Hzversions:2μAat3V –216-Hzversions:16μAat3V ?1.65-Vto5.5-VoperatingVCCrange ?Magneticthresholdoption(typicalBOP): –1.8mTwith0.6-mThysteresis –2.85mTwith1.35-mThysteresis –3mTwith

B101

型號：TPS6286B101VBMR；Package：VQFN-HR；TPS6286Axx and TPS6286Bxx 2.4V to 5.5V Input, 6A, 8A, and 10A, Synchronous Step-Down Converter in 2mm × 3mm QFN Package With FB/I2C Interface

1Features ?2.4Vto5.5Vinputvoltagerange ?8mΩand8mΩinternalpowerMOSFETs ?5.1μAoperatingquiescentcurrent ?1.2MHzswitchingfrequency ?100%dutycyclemode ?0.7%outputvoltageaccuracy ?ForcedPWMorpowersavemode ?DCS-Controltopology(constanton-time) ?FB

B1020B

型號：TTB1020B；Package：TO-220SIS；Bipolar Transistors Silicon PNP Triple-Diffused Type

Applications ?High-CurrentSwitching ?HammerDrivers Features (1)HighDCcurrentgain:hFE=2000(min)(VCE=-3V,IC=-3A) (2)Lowcollector-emittersaturationvoltage:VCE(sat)=-1.5V(max)(IC=-3A,IB=-6mA) (3)ComplementarytoTTD1415B

B1067B

型號：TTB1067B；Package：TO-126N；Bipolar Transistors Silicon PNP Epitaxial Type (Darlington Transistor)

Applications ?MicromotorDrivers ?HammerDrivers ?Switching ?PowerAmplifiers Features (1)HighDCcurrentgain:hFE=2000(min)(VCE=-2V,IC=-1A) (2)Lowcollector-emittersaturationvoltage:VCE(sat)=-1.5V(max)(IC=-1A,IB=-1mA) (3)ComplementarytoTTD1509B

B10

型號：UMB10N；Package：SOT-363；General purpose (dual digital transistors)

Features 1)TwoDTA123JchipsinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Application INVERTER,INTERFACE,DRIVE

B10

型號：UMB10NFHA；Package：UMT6；PNP -100mA -50V Complex Digital Transistors

lFeatures 1)Built-InBiasingResistors. 2)TwoDTA123Jchipsinonepackage. 3)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 4)Thebiasresistorsconsistofthin-filmresistors withcompleteisolat

B11

型號：UMB11N；Package：SOT-363；PNP -100mA -50V Complex Digital Transistors

Features 1)TwoDTA114EchipsinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf.

B11

型號：UMB11N；Package：SOT-363；General purpose (dual digital transistors)

Features 1)TwoDTA114EchipsinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf.

B11

型號：UMB11N；Package：SOT-363；General purpose Dual digital transistors

Features 1)TwoDTA114EchipsinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf.

B123

型號：UN010DN26TE；Package：SOT-26；Dual N-Channel Enhancement Mode MOSFET

Features AdvancedTrenchProcessTechnology LowThresholdVoltage FastSwitchingSpeed Halogen-Free&Lead-Free Applications LoadSwitchforPortableDevices VoltageControlledSmallSignalSwitch