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B1FFK

型號(hào)：CD1408-FF1800；CD1408-FF1200~FF11500 – Surface Mount Rectifier Diode

Features ■Leadfreedevice(RoHScompliant*) ■Lowprofile ■Lowpowerloss,highefficiency ■UL94V-0classification Applications ■Highfrequencyswitchingpowersupplies ■Inverters ■Freewheeling ■Polarityprotection

B10

型號(hào)：CDBTS1100R-HF；Package：SOD-123F；SMD Schottky Barrier Diode

Features -Lowforwardvoltage. -Designedformountingonsmallsurface. -Lowreversecurrent.

B113ZS

型號(hào)：DTB113ZS；Package：SPT/SC-72；Digital transistors (built-in resistors)

Feature 1)Built-inbiasresistorsenablethe configurationofaninvertercircuit withoutconnectingexternalinput resistors(seeequivalentcircuit). 2)Thebiasresistorsconsistofthin filmresistorswithcompleteisolationto allowpositivebiasingofthe input.Th

B10

型號(hào)：EMB10；Package：EMT6；General purpose (dual digital transistors)

Features 1)TwoDTA123JchipsinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Application INVERTER,INTERFACE,DRIVE

B10

型號(hào)：EMB10FHA；Package：EMT6；PNP -100mA -50V Complex Digital Transistors

lFeatures 1)Built-InBiasingResistors. 2)TwoDTA123Jchipsinonepackage. 3)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 4)Thebiasresistorsconsistofthin-filmresistors withcompleteisolat

B11

型號(hào)：EMB11；Package：EMT6；PNP -100mA -50V Complex Digital Transistors

Features 1)TwoDTA114EchipsinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf.

B11

型號(hào)：EMB11；Package：EMT6；General purpose (dual digital transistors)

Features 1)TwoDTA114EchipsinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf.

B11

型號(hào)：EMB11；Package：EMT6；General purpose Dual digital transistors

Features 1)TwoDTA114EchipsinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf.

B12C

型號(hào)：ESD12V23T-2LA；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature 140~298WattsPeakPulsePowerperLine(tp=8/20μs) ProtectstwoI/Olines Lowclampingvoltage Workingvoltages:3.3V~36V Lowleakagecurrent IEC61000-4-2(ESD)±30kV(air),±30kV(contact)3.3V~15V IEC61000-4-2(ESD)±15kV(air),±8kV(contact)24V~36V IEC61000-4-4(EFT)40A(5

B12C

型號(hào)：ESD12V23TS-2LA；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature MoistureSensitivityLevel(MSL-1) AEC-Q101qualified 140~298WattsPeakPulsePowerperLine(tp=8/20μs) ProtectstwounidirectionalI/Olines LowClampingVoltage WorkingVoltages:3.3V~36V Lowleakagecurrent IEC61000-4-4(EFT):40A(5/50ηs) IEC61000-4-2(ESD)±30kV(air),±30