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B1C

型號(hào)：SBRS81100NT3G；Package：SMB；Schottky Power Rectifier Surface Mount Power Package

SchottkyPowerRectifiersemploytheuseoftheSchottkyBarrier principleinalargeareametal-to-siliconpowerdiode.State-of-the-art geometryfeaturesepitaxialconstructionwithoxidepassivationand metaloverlaycontact.Ideallysuitedforlowvoltage,highfrequency rectification,or

B1C

型號(hào)：SBRS81100T3G；Package：SMB；Schottky Power Rectifier Surface Mount Power Package

SchottkyPowerRectifiersemploytheuseoftheSchottkyBarrier principleinalargeareametal-to-siliconpowerdiode.State-of-the-art geometryfeaturesepitaxialconstructionwithoxidepassivationand metaloverlaycontact.Ideallysuitedforlowvoltage,highfrequency rectification,or

B1C

型號(hào)：SBRS81100T3G-VF01；Package：SMB；Schottky Power Rectifier Surface Mount Power Package

SchottkyPowerRectifiersemploytheuseoftheSchottkyBarrier principleinalargeareametal-to-siliconpowerdiode.State-of-the-art geometryfeaturesepitaxialconstructionwithoxidepassivationand metaloverlaycontact.Ideallysuitedforlowvoltage,highfrequency rectification,or

B19

型號(hào)：SBRS8190NT3G；Package：SMB；Schottky Power Rectifier Surface Mount Power Package

SchottkyPowerRectifiersemploytheuseoftheSchottkyBarrier principleinalargeareametal-to-siliconpowerdiode.State-of-the-art geometryfeaturesepitaxialconstructionwithoxidepassivationand metaloverlaycontact.Ideallysuitedforlowvoltage,highfrequency rectification,or

B19

型號(hào)：SBRS8190T3G；Package：SMB；Schottky Power Rectifier Surface Mount Power Package

SchottkyPowerRectifiersemploytheuseoftheSchottkyBarrier principleinalargeareametal-to-siliconpowerdiode.State-of-the-art geometryfeaturesepitaxialconstructionwithoxidepassivationand metaloverlaycontact.Ideallysuitedforlowvoltage,highfrequency rectification,or

B11NM80

型號(hào)：STB11NM80；Package：D2PAK；N-channel 800 V, 0.35 Ω, 11 A MDmesh? Power MOSFET in D2PAK, TO-220FP, I2PAK, TO-220, TO-247

Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh?technology,which associatesth

B12NM50

型號(hào)：STB12NM50-1；Package：I2PAK；N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET

Description TheMDmesh?isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoptionof

B12NM50

型號(hào)：STB12NM50T4；Package：D2PAK；N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET

Description TheMDmesh?isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH?horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoptionof

B1D

型號(hào)：TMAG5231B1DQDMRR；Package：X2SON；TMAG5231 Low-Power, Hall Effect Switch

1Features ?Lowpowerconsumption: –10-Hzversions:1.3μAat3V –20-Hzversions:2μAat3V –216-Hzversions:16μAat3V ?1.65-Vto5.5-VoperatingVCCrange ?Magneticthresholdoption(typicalBOP): –1.8mTwith0.6-mThysteresis –2.85mTwith1.35-mThysteresis –3mTwith

B1D

型號(hào)：TMAG5231B1DQDMRR；Package：X2SON；TMAG5231 Low-Power, Hall Effect Switch

1Features ?Lowpowerconsumption: –10-Hzversions:1.3μAat3V –20-Hzversions:2μAat3V –216-Hzversions:16μAat3V ?1.65-Vto5.5-VoperatingVCCrange ?Magneticthresholdoption(typicalBOP): –1.8mTwith0.6-mThysteresis –2.85mTwith1.35-mThysteresis –3mTwith