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300m Amps, 60 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 2N7002W uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ■ FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Control

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Small Signal MOSFET 115 mA, 60 V

N–Channel SOT–323 ? We declare that the material of product compliance with RoHS requirements. ? ESD Protected:1000V ? Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H

文件：374.58 Kbytes 頁數(shù)：5 Pages

WILLASWILLAS ELECTRONIC CORP

威倫威倫電子股份有限公司

Small Signal MOSFET 60 V, 340 mA, Single, N??hannel, SC??0

Features ? ESD Protected ? Low RDS(on) ? Small Footprint Surface Mount Package ? 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS

文件：107.65 Kbytes 頁數(shù)：5 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/72kc/marking.html">72Kc；Package：SOT-323；N-Channel Enhancement Mode MOSFET

Features Low on-resistance ESD protected gate up to 2kV HBM High-speed switching Drive circuits can be simple Parallel use is easy

文件：1.83804 Mbytes 頁數(shù)：5 Pages

TECHPUBLIC

臺(tái)舟電子

絲?。?a target="_blank" title="Marking" href="/k72/marking.html">K72；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate MOSFETS

FEATURES High density cell design for low RDS(on) Voltage controlled small signal switch Rugged and reliable High saturation current capability APPLICATION Load Switch for Portable Devices DC/DC Converter

文件：2.29295 Mbytes 頁數(shù)：5 Pages

DGNJDZ

南晶電子

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

Features ? N-Channel MOSFET ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Small Surface Mount Package ? ESD Protected Gate, 1.2kV HBM ? Lead, Halogen and Antimony Free, RoHS Compliant ? Green Device (Notes 1 and 2) ? Qualified to AEC-Q1

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DIODES

美臺(tái)半導(dǎo)體

絲印：X1；Package：DFN1006-3；N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

Features ? N-Channel MOSFET ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Small Surface Mount Package ? ESD Protected Gate, 1.2kV HBM ? Lead, Halogen and Antimony Free, RoHS Compliant ? Green Device (Notes 1 and 2) ? Qualified to AEC-Q1

文件：117.36 Kbytes 頁數(shù)：5 Pages

DIODES

美臺(tái)半導(dǎo)體

300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION The UTC 2N7002Z uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

文件：169.71 Kbytes 頁數(shù)：4 Pages

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300m Amps, 60 Volts DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION The UTC 2N7002ZDW uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF) *

文件：176.96 Kbytes 頁數(shù)：3 Pages

UTC

友順

300m Amps, 60 Volts DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION The UTC 2N7002ZDW uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF) *

文件：176.96 Kbytes 頁數(shù)：3 Pages

UTC

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