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12M

型號(hào)：DESD1Z12；Package：SOD-123；Plastic-Encapsulate Diodes

FEATURES Bi-directionalESDprotection Lowreversestand-offvoltage:12V Lowreverseclampingvoltage Lowleakagecurrent Fastresponsetime JESD22-A114-BESDRatingofclass3Bperhumanbodymodel IEC61000-4-2Level4ESDprotection

12M

型號(hào)：DESD3Z12；Package：SOD-323；TVS Diode

Features ◆150Wattspeakpulsepower(tp=8/20μs) ◆Transientprotectionforhighspeeddatalinesto IEC61000-4-2(ESD)±15kV(air),±8kV(contact) IEC61000-4-4(EFT)40A(5/50ns) ◆ProtectsOnePowerorI/OPort ◆Lowleakagecurrent ◆Lowoperatingandclampingvoltages ◆Solid-stat

12M

型號(hào)：SM12；Package：SOT-23；ESD PROTECTION

Features ?ForSensitiveESDProtection ?ExcellentClampingCapability ?LowLeakage ?FastResponse,ResponseTimeLessthan1ns ?MoistureSensitivityLevel1 ?EpoxyMeetsUL94V-0FlammabilityRating ?HalogenFree.“Green”Device(Note1) ?LeadFreeFinish/RoHSCompliant(PSuffix

12M

型號(hào)：SM12T1G；Package：SOT-23；2-Line Uni-directional TVS Diode

Features 450Wpeakpulsepower(8/20s) Protectsonebi-directionalortwouni-directionallines Ultralowleakage:nAlevel Operatingvoltage:12V Lowclampingvoltage Complieswithfollowingstandards: —IEC61000-4-2(ESD)immunitytest Airdischarge:+30kV/ Contactdischarge:+30kV —I

12M

型號(hào)：GSOT12C；Package：SOT23；TVS Diode Array

12M2H008

型號(hào)：IMBG120R008M2H；Package：PG-TO263-7-HV-ND5.8；CoolSiC? 1200 V SiC MOSFET G2

Features ?VDSS=1200VatTvj=25°C ?IDDC=144AatTC=100°C ?RDS(on)=7.7mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparas

12M2H012

型號(hào)：IMBG120R012M2H；Package：PG-TO263-7-HV-ND5.8；CoolSiC? 1200 V SiC MOSFET G2

Features ?VDSS=1200VatTvj=25°C ?IDDC=102AatTC=100°C ?RDS(on)=12.2mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstpara

12M2H017

型號(hào)：IMBG120R017M2H；Package：PG-TO263-7-HV-ND5.8；CoolSiC? 1200 V SiC MOSFET G2

Features ?VDSS=1200VatTvj=25°C ?IDDC=76AatTC=100°C ?RDS(on)=17.1mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparas

12M2H022

型號(hào)：IMBG120R022M2H；Package：PG-TO263-7-HV-ND5.8；CoolSiC? 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET

Features ?VDSS=1200VatTvj=25°C ?IDDC=62AatTC=100°C ?RDS(on)=21.6mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparas

12M2H026

型號(hào)：IMBG120R026M2H；Package：PG-TO263-7-HV-ND5.8；CoolSiC? 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET

Features ?VDSS=1200VatTvj=25°C ?IDDC=53AatTC=100°C ?RDS(on)=25.4mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparas