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IMBG120R012M2H

絲印：12M2H012；Package：PG-TO263-7-HV-ND5.8；CoolSiC? 1200 V SiC MOSFET G2

Features ?VDSS=1200VatTvj=25°C ?IDDC=102AatTC=100°C ?RDS(on)=12.2mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstpara

IMBG120R012M2H

Silicon Carbide MOSFET Discretes; \n優(yōu)勢:\n;

IMSQ120R012M2HH

CoolSiC?1200VSiCMOSFETG2:SiliconCarbideMOSFETwithtopsidecoolingand.XTtechnology

Features ?VDSS=1200VatTvj=25°C ?IDDC=89AatTC=100°C ?RDS(on)=12mΩatVGS=18V,Tvj=25°C ?Internallayoutoptimizedforfastswitching ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvo

IMZC120R012M2H

CoolSiC?1200VSiCMOSFETG2:SiliconCarbideMOSFETwith.XTinterconnectiontechnology

Features ?VDSS=1200VatTvj=25°C ?IDDC=91AatTC=100°C ?RDS(on)=12mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasit

IMBG120R220M1HXTMA1

Infineon
TO263-7