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12M2H026

型號(hào)：IMCQ120R026M2H；Package：PG-HDSOP-22-U03；CoolSiC? 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling

Features ?VDSS=1200VatTvj=25°C ?IDDC=58AatTC=100°C ?RDS(on)=25.4mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparas

12M2H034

型號(hào)：IMCQ120R034M2H；Package：PG-HDSOP-22-U03；CoolSiC? 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling

Features ?VDSS=1200VatTvj=25°C ?IDDC=45AatTC=100°C ?RDS(on)=34mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasit

12M2H040

型號(hào)：IMCQ120R040M2H；Package：PG-HDSOP-22-U03；CoolSiC? 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling

Features ?VDSS=1200VatTvj=25°C ?IDDC=39AatTC=100°C ?RDS(on)=39.6mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparas

12M2H053

型號(hào)：IMCQ120R053M2H；Package：PG-HDSOP-22-U03；CoolSiC? 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling

Features ?VDSS=1200VatTvj=25°C ?IDDC=31AatTC=100°C ?RDS(on)=52.6mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparas

12M2H012

型號(hào)：IMSQ120R012M2HH；Package：PG-HDSOP-16-U03；CoolSiC? 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology

Features ?VDSS=1200VatTvj=25°C ?IDDC=89AatTC=100°C ?RDS(on)=12mΩatVGS=18V,Tvj=25°C ?Internallayoutoptimizedforfastswitching ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvo

12M2H026

型號(hào)：IMSQ120R026M2HH；Package：PG-HDSOP-16-U03；CoolSiC? 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology

Features ?VDSS=1200VatTvj=25°C ?IDDC=59AatTC=100°C ?RDS(on)=26mΩatVGS=18V,Tvj=25°C ?Internallayoutoptimizedforfastswitching ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvo

12M2H040

型號(hào)：IMSQ120R040M2HH；Package：PG-HDSOP-16-U03；CoolSiC? 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology

Features ?VDSS=1200VatTvj=25°C ?IDDC=40AatTC=100°C ?RDS(on)=40mΩatVGS=18V,Tvj=25°C ?Internallayoutoptimizedforfastswitching ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvo

12M1H007

型號(hào)：IMW120R007M1H；Package：PG-TO247-3-STD-N2.5；CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET

Features ?VDSS=1200VatTvj=25°C ?IDCC=225AatTvj=25°C ?RDS(on)=7mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasiticturnon,0Vturn-offgatevoltagecanbeapplied ?Robustbodydiodefor

12M1H014

型號(hào)：IMW120R014M1H；Package：PG-TO247-3-STD-N2.5；CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET

Features ?VDSS=1200VatTvj=25°C ?IDCC=127AatTvj=25°C ?RDS(on)=14mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Shortcircuitwithstandtime3μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasiticturnon,0Vturn-offgatevoltagec

12M1H020

型號(hào)：IMW120R020M1H；Package：PG-TO247-3-STD-N2.5；CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET

Features ?VDSS=1200VatTvj=25°C ?IDCC=98AatTvj=25°C ?RDS(on)=19mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?Shortcircuitwithstandtime3μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasiticturnon,0Vturn-offgatevoltageca