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IMSQ120R012M2HH

絲?。?a target="_blank" title="Marking" href="/12m2h012/marking.html">12M2H012；Package：PG-HDSOP-16-U03；CoolSiC? 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology

Features ?VDSS=1200VatTvj=25°C ?IDDC=89AatTC=100°C ?RDS(on)=12mΩatVGS=18V,Tvj=25°C ?Internallayoutoptimizedforfastswitching ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvo

IMBG120R012M2H

CoolSiC?1200VSiCMOSFETG2

Features ?VDSS=1200VatTvj=25°C ?IDDC=102AatTC=100°C ?RDS(on)=12.2mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstpara

IMZC120R012M2H

CoolSiC?1200VSiCMOSFETG2:SiliconCarbideMOSFETwith.XTinterconnectiontechnology

Features ?VDSS=1200VatTvj=25°C ?IDDC=91AatTC=100°C ?RDS(on)=12mΩatVGS=18V,Tvj=25°C ?Verylowswitchinglosses ?OverloadoperationuptoTvj=200°C ?Shortcircuitwithstandtime2μs ?Benchmarkgatethresholdvoltage,VGS(th)=4.2V ?Robustagainstparasit

IMW120R030M1H

INFINEON
TO-247

IMW120R090M1H

INFINEON/英飛凌
TO-247

INFINEON/英飛凌