描述 Description

This is a 512Mb Low Power DDR SDRAM organized as 4M words x 4 banks x 16bits

特性 Features

?Note: K-Die keeps supporting but D-Die is suggested for the new design
? Powerer supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V
? Data width: x16
? Burst Type: Sequential or Interleave、Clock rate : 166MHz, 200MHz
? Standard Self Refresh Mode
? PASR、ATCSR、Power Down Mode、DPD
? Programmable output buffer driver strength
? Four internal banks for concurrent operation
? CAS Latency: 2 and 3
? Burst Length: 2、4 、8 and 16
? Operating Temperature Range: Extended (-25°C ~ 85°C), Industrial (-40°C ~ 85°C)
? Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver
? Package:60VFBGA