描述 Description

Qorvo's UJ3C120070K4S is a 1200 V, 70 mohm Gen 3 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows for a true \"drop-in replacement\" to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-4L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

特性 Features

? On-resistance RDS(on): 70 mohm (typ)
? Operating temperature: 175 °C (max)
? Excellent reverse recovery: Qrr = 113 nC
? Low body diode VFSD: 1.41 V
? Low gate charge: QG = 46 nC
? Threshold voltage VG(th): 5.0 V (typ) allowing 0 to 15 V drive
? Low intrinsic capacitance
? ESD protected: HBM class 2 and CDM class C3
? TO-247-4L package for faster switching, clean gate waveforms

應(yīng)用 Application

? EV Charging
? PV Inverters
? Switched-Mode Power Supplies
? Power Factor Correction Modules
? Motor Drives
? Induction Heating