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UJ3C065080K3S中文資料650 V, 80 mohm SiC FET數(shù)據(jù)手冊Qorvo規(guī)格書
UJ3C065080K3S規(guī)格書詳情
描述 Description
Qorvo's UJ3C065080K3S 650 V, 80 mohm RDS(on) SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. Available in a TO-247-3L package, these devices are excellent for switching inductive loads, and any application requiring standard gate drive.
特性 Features
? On-resistance (RDS(on)): 80 mohm (typ)
? Maximum operating temperature: 175 °C
? Excellent reverse recovery
? Low gate charge
? Low intrinsic capacitance
? ESD protected, HBM class 2
應(yīng)用 Application
? EV Charging
? PV Inverters
? Switched-Mode Power Supplies
? Power Factor Correction Modules
? Motor Drives
? Induction Heating
技術(shù)參數(shù)
- 制造商編號
：UJ3C065080K3S
- 生產(chǎn)廠家
：Qorvo
- RDS(on) 典型值 @ 25C(mohm)
：80
- ID 最大值(A)
：31
- 代
：Gen 3
- Tj 最大值(°C)
：175
- 車規(guī)級認(rèn)證
：Yes
- 封裝類型
：TO-247-3L
- RoHS
：Yes
- Lead Free
：Yes
- Halogen Free
：Yes
- ITAR Restricted
：No
- ECCN
：EAR99
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
USCI |
22+ |
TO-247 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
USCI |
兩年內(nèi) |
NA |
9886 |
實單價格可談 |
詢價 | ||
USCI |
2023+ |
TO-247 |
1000 |
專注全新正品,優(yōu)勢現(xiàn)貨供應(yīng) |
詢價 | ||
USCI |
20+ |
TO-247 |
15 |
現(xiàn)貨很近!原廠很遠!只做原裝 |
詢價 | ||
Qorvo |
25+ |
TO-220-2 |
9350 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
QORVO |
24+ |
N/A |
1467 |
原裝原裝原裝 |
詢價 | ||
USIC |
25+ |
30000 |
原裝現(xiàn)貨,支持實單 |
詢價 | |||
USCI |
2022+ |
TO-247 |
15 |
原廠代理 終端免費提供樣品 |
詢價 | ||
USCI |
24+ |
TO247-3 |
60000 |
詢價 | |||
USCI |
23+ |
TO-247 |
11200 |
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 |
