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SVSP14N65TD2中文資料士蘭微數(shù)據(jù)手冊PDF規(guī)格書
SVSP14N65TD2規(guī)格書詳情
DESCRIPTION
SVSP14N65FJD/T/KD2 is an N-channel enhancement mode high
voltage power MOSFETs produced using Silan’s DPMOS technology.
It achieves low conduction loss and switching losses. It leads the
design engineers to their power converters with high efficiency, high
power density, and superior thermal behavior. Furthermore, it’s
universal applicable, i.e., suitable for hard and soft switching
topologies.
FEATURES
? 14A,650V, RDS(on)(typ.)=0.26?@VGS=10V
? New revolutionary high voltage technology
? Ultra low gate charge
? Periodic avalanche rated
? Extreme dv/dt rated
? High peak current capability
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Silan |
23+ |
TO-247 |
2795 |
現(xiàn)貨庫存,實單請給接受價格 |
詢價 | ||
SILAN |
22+ |
PDFN8 |
621 |
原裝 |
詢價 | ||
24+ |
N/A |
58000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
SILAN/士蘭微 |
21+ |
TO220 |
38000 |
詢價 | |||
SILAN/士蘭微 |
25+ |
DFN |
10000 |
原廠原裝,價格優(yōu)勢 |
詢價 | ||
SAMSUNG |
25+ |
QFP |
6500 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
SILAN(士蘭微) |
23+ |
TO-220FJD-3L |
431 |
三極管/MOS管/晶體管 > 場效應(yīng)管(MOSFET) |
詢價 | ||
SAMSUNG |
24+ |
QFP |
71 |
詢價 | |||
SAMSUNG/三星 |
23+ |
QFP48 |
98900 |
原廠原裝正品現(xiàn)貨!! |
詢價 | ||
冠坤電子 |
21+ |
10mm*12.5mm |
13 |
全新原裝鄙視假貨 |
詢價 |