首頁>SVSP11N65FJDD2>規(guī)格書詳情
SVSP11N65FJDD2中文資料士蘭微數(shù)據(jù)手冊(cè)PDF規(guī)格書
| 廠商型號(hào) |
SVSP11N65FJDD2 |
| 功能描述 | 11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR |
| 絲印標(biāo)識(shí) | |
| 封裝外殼 | TO-220FJD-3L |
| 文件大小 |
413.58 Kbytes |
| 頁面數(shù)量 |
10 頁 |
| 生產(chǎn)廠商 | SILAN |
| 中文名稱 | 士蘭微 |
| 網(wǎng)址 | |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-8-8 14:08:00 |
| 人工找貨 | SVSP11N65FJDD2價(jià)格和庫存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
SVSP11N65FJDD2規(guī)格書詳情
DESCRIPTION
SVSP11N65D/F/S/FJD/K/TD2 is an N-channel enhancement mode
high voltage power MOSFETs produced using Silan’s super junction
MOS technology. It achieves low conduction loss and switching
losses. It leads the design engineers to their power converters with
high efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, i.e., suitable for hard and soft
switching topologies.
FEATURES
? 11A,650V, RDS(on)(typ.)=0.33?@VGS=10V
? New revolutionary high voltage technology
? Ultra low gate charge
? Periodic avalanche rated
? Extreme dv/dt rated
? High peak current capability
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Silan |
23+ |
TO-247 |
20000 |
原裝正品價(jià)格優(yōu)惠,志同道合共謀發(fā)展 |
詢價(jià) | ||
杭州士蘭 |
兩年內(nèi) |
NA |
6380 |
實(shí)單價(jià)格可談 |
詢價(jià) | ||
冠坤電子 |
21+ |
10mm*12.5mm |
13 |
全新原裝鄙視假貨 |
詢價(jià) | ||
SCS |
24+ |
con |
10000 |
查現(xiàn)貨到京北通宇商城 |
詢價(jià) | ||
SILAN(士蘭微) |
2025+ |
TO-220FJD-3L |
10560 |
詢價(jià) | |||
SAMSUNG |
25+ |
QFP |
6500 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價(jià) | ||
SAMSUNG/三星 |
25+ |
QFP48 |
996880 |
只做原裝,歡迎來電資詢 |
詢價(jià) | ||
SAMSUNG |
24+ |
QFP |
71 |
詢價(jià) | |||
SILAN/士蘭微 |
25+ |
DFN |
10000 |
原廠原裝,價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
BGA |
40 |
詢價(jià) |
