描述 Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

特性 Features

? Maximum junction temperature: TJ = 175 °C
? 6 μs of minimum short-circuit withstand time
? VCE(sat) = 1.65 V (typ.) @ IC = 120 A
? Tight parameter distribution
? Safer paralleling
? Positive VCE(sat) temperature coefficient
? Low thermal resistance
? Soft- and fast-recovery antiparallel diode

簡介

STGYA120M65DF2屬于分立半導(dǎo)體產(chǎn)品的晶體管-UGBT、MOSFET-單。由制造生產(chǎn)的STGYA120M65DF2晶體管 - UGBT、MOSFET - 單單 IGBT（絕緣柵雙極晶體管）是一種具有三個端子的多層半導(dǎo)體器件，能夠處理大電流，具有快速開關(guān)特性。其特征參數(shù)包括類型、集射極擊穿電壓、集電極電流、脈沖集電極電流、VCE(ON)、開關(guān)能量和柵極電荷。