描述 Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

特性 Features

? Maximum junction temperature: TJ = 175 °C
? High speed switching series
? Minimized tail current
? Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A
? Tight parameter distribution
? Safe paralleling
? Positive VCE(sat) temperature coefficient
? Low thermal resistance
? Very fast soft recovery antiparallel diode

簡介

STGWT80H65DFB屬于分立半導體產(chǎn)品的晶體管-UGBT、MOSFET-單。由制造生產(chǎn)的STGWT80H65DFB晶體管 - UGBT、MOSFET - 單單 IGBT（絕緣柵雙極晶體管）是一種具有三個端子的多層半導體器件，能夠處理大電流，具有快速開關(guān)特性。其特征參數(shù)包括類型、集射極擊穿電壓、集電極電流、脈沖集電極電流、VCE(ON)、開關(guān)能量和柵極電荷。