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首頁>STGWT40V60DF>詳情
STGWT40V60DF_STMICROELECTRONICS/意法半導(dǎo)體_IGBT 晶體管 600V 40A High Speed Trench Gate IGBT坤融電子2部
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號:
STGWT40V60DF
- 功能描述:
IGBT 晶體管 600V 40A High Speed Trench Gate IGBT
- RoHS:
否
- 制造商:
STMicroelectronics
- 配置:
Single 集電極—發(fā)射極最大電壓
- VCEO:
600 V
- 集電極—射極飽和電壓:
2.35 V
- 柵極/發(fā)射極最大電壓:
+/- 20 V 在25
- C的連續(xù)集電極電流:
80 A
- 柵極—射極漏泄電流:
250 nA
- 功率耗散:
283 W
- 最大工作溫度:
+ 175 C
- 封裝/箱體:
TO-3P
- 封裝:
Tube
供應(yīng)商
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