描述 Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

特性 Features

? Maximum junction temperature : TJ = 175 °C
? Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
? Minimized tail current
? Tight parameter distribution
? Low thermal resistance
? Positive VCE(sat) temperature coefficient

簡介

STGP20H65FB2屬于分立半導體產(chǎn)品的晶體管-UGBT、MOSFET-單。由制造生產(chǎn)的STGP20H65FB2晶體管 - UGBT、MOSFET - 單單 IGBT（絕緣柵雙極晶體管）是一種具有三個端子的多層半導體器件，能夠處理大電流，具有快速開關特性。其特征參數(shù)包括類型、集射極擊穿電壓、集電極電流、脈沖集電極電流、VCE(ON)、開關能量和柵極電荷。