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STB24N60M6

N-Channel MOSFET

FEATURES ·DrainCurrent-ID=17A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.19Ω(Max)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·PowerFactorCorrection(PFC)

STB24N60M6

N溝道600 V、162 mOhm典型值、17 A MDmesh M6功率MOSFET，D2PAK封裝; ? Reduced switching losses \n? Lower RDS(on) per area vs previous generation \n? Low gate input resistance \n? 100% avalanche tested \n? Zener-protected;

The new MDmesh? M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.\n\n

STB24N60M6

絲?。?a target="_blank" title="Marking" href="/24n60m6/marking.html">24N60M6；Package：D?2PAK；N-channel 600 V, 162 m廓 typ., 17 A, MDmesh??M6 Power MOSFET in a D?PAK

STF24N60M6

N-channel600V,162mtyp.,17A,MDmeshTMM6PowerMOSFETinaTO-220FPpackage

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThenewMDmesh?M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof

STI24N60M6

N-channel600V,162mtyp.,17A,MDmesh?M6PowerMOSFETinanI2PAKpackage

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThenewMDmesh?M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof

STL24N60M6

N-channel600V,0.175typ.,15A,MDmeshTMM6PowerMOSFETinaPowerFLATTM8x8HVpackage

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThenewMDmesh?M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof

STO24N60M6

N-channel600V,162mtyp.,17A,MDmeshM6PowerMOSFETinaTO?LLpackage

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThenewMDmeshM6technologyincorporatesthemostrecentadvancementstothe well-knownandconsolidatedMDmeshfamilyof

STP24N60M6

N-channel600V,162mtyp.,17A,MDmesh?M6PowerMOSFETinaTO-220package

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThenewMDmesh?M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof

STW24N60M6

N-channel600V,162mtyp.,17A,MDmeshTMM6PowerMOSFETinaTO-247package

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThenewMDmesh?M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof