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SSM3J327R

Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS??

○PowerManagementSwitchApplications ?1.5-Vdrive ?LowON-resistance:RDS(ON)=240m?(max)(@VGS=-1.5V) RDS(ON)=168m?(max)(@VGS=-1.8V) RDS(ON)=123m?(max)(@VGS=-2.5V)

SSM3J327R

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

SSM3J327R

P-Channel 20-V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?LoadSwitch ?PASwitch ?DC/DCConverters

SSM3J327R

絲?。?a target="_blank" title="Marking" href="/kfg/marking.html">KFG；Package：SOT-23F；MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications ?PowerManagementSwitches Features (1)1.5-Vdrive (2)Lowdrain-sourceon-resistance :RDS(ON)=240mΩ(max)(@VGS=-1.5V) RDS(ON)=168mΩ(max)(@VGS=-1.8V) RDS(ON)=123mΩ(max)(@VGS=-2.5V) RDS(ON)=93mΩ(max)(@VGS=-4.5V)

SSM3J327R

Small Low ON resistance MOSFETs; Drain current ID -3.9 A \nPower Dissipation PD 1 W \nDrain-Source voltage VDSS -20 V \nGate-Source voltage VGSS +/-8 V \n;

Polarity：P-ch\nGeneration：U-MOSⅥ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：泰國\n

SSM3J327R_V01

MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications ?PowerManagementSwitches Features (1)1.5-Vdrive (2)Lowdrain-sourceon-resistance :RDS(ON)=240mΩ(max)(@VGS=-1.5V) RDS(ON)=168mΩ(max)(@VGS=-1.8V) RDS(ON)=123mΩ(max)(@VGS=-2.5V) RDS(ON)=93mΩ(max)(@VGS=-4.5V)

SSM3J327R_14

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)