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STF33N60DM6

N-channel 600 V, 115 m typ., 25 A, MDmesh DM6 Power MOSFET in a TO?220FP package

Features ?Fast-recoverybodydiode ?LowerRDS(on)perareavspreviousgeneration ?Lowgatecharge,inputcapacitanceandresistance ?100avalanchetested ?Extremelyhighdv/dtruggedness ?Zener-protected Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmeshDM

STMICROELECTRONICSSTMicroelectronics

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STF33N60DM6

N溝道600 V、115 mOhm典型值、25 A MDmesh DM6功率MOSFET，TO-220FP封裝; ? Fast-recovery body diode \n? Lower RDS(on) per area vs previous generation \n? Low gate charge, input capacitance and resistance \n? 100% avalanche tested \n? Extremely high dv/dt ruggedness \n? Zener-protected;

This high-voltage N-channel Power MOSFET is part of the MDmesh? DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.\n\n

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STB33N60DM6

N-channel600V,115mΩtyp.,25A,MDmeshDM6PowerMOSFETinaD2PAKpackage

Features ?Fast-recoverybodydiode ?LowerRDS(on)perareavspreviousgeneration ?Lowgatecharge,inputcapacitanceandresistance ?100avalanchetested ?Extremelyhighdv/dtruggedness ?Zener-protected Applications ?Switchingapplications Description Thishigh-voltageN-cha

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STL33N60DM6

N-channel600V,125mtyp.,21A,MDmeshDM6PowerMOSFETinaPowerFLAT8x8HVpackage

Features ?Fast-recoverybodydiode ?LowerRDS(on)perareavspreviousgeneration ?Lowgatecharge,inputcapacitanceandresistance ?100avalanchetested ?Extremelyhighdv/dtruggedness ?Zener-protected Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmeshDM

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP33N60DM6

N-channel600V,115mtyp.,25A,MDmesh?DM6PowerMOSFETinaTO?220package

Features ?Fast-recoverybodydiode ?LowerRDS(on)perareavspreviousgeneration ?Lowgatecharge,inputcapacitanceandresistance ?100avalanchetested ?Extremelyhighdv/dtruggedness ?Zener-protected ?High-creepagepackage Description Thishigh-voltageN-channelPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

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技術(shù)參數(shù)

  • Package：

    TO-220FP

  • Grade：

    Industrial

  • VDSS(V)：

    600

  • RDS(on)_max(@ VGS=10V)(Ω)：

    0.128

  • Drain Current (Dc)_max(A)：

    25

  • PTOT_max(W)：

    35

  • Qg_typ(nC)：

    35

  • Features：

    Fast recovery diode

  • Reverse Recovery Time_typ(ns)：

    115

  • Qrr_typ(nC)：

    520

  • Peak Reverse Current_nom(A)：

    9

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
ST
21+
TO-220F
1869
公司現(xiàn)貨，支持實(shí)單。
 詢價(jià)
ST(意法半導(dǎo)體)
24+
TO-220F
7828
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價(jià)
ST(意法半導(dǎo)體)
2447
TO-220FP
105000
50個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期
 詢價(jià)
ST
22+
TO-220FP-3
6000
十年配單,只做原裝
 詢價(jià)
ST/意法
23+
NA
8950
電子元器件供應(yīng)原裝現(xiàn)貨. 優(yōu)質(zhì)獨(dú)立分銷。原廠核心渠道
 詢價(jià)
ST/意法
22+
N/A
8950
現(xiàn)貨,原廠原裝假一罰十!
 詢價(jià)
ST/意法
22+
TO-220FP-3
14100
原裝正品
 詢價(jià)
ST
22+
TO-220FP-3
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價(jià)
24+
N/A
82000
一級代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
ST/意法
23+
NA
2252
18萬條庫存 一站式配齊
 詢價(jià)
更多STF33N60DM6供應(yīng)商 更新時間2025-7-27 16:44:00

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