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SSM3J327F

Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS??

○PowerManagementSwitchApplications ?1.5-Vdrive ?LowON-resistance:RDS(ON)=242m?(max)(@VGS=-1.5V) RDS(ON)=170m?(max)(@VGS=-1.8V) RDS(ON)=125m?(max)(@VGS=-2.5V)

SSM3J327F

P-Channel 20-V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?LoadSwitch ?PASwitch ?DC/DCConverters

SSM3J327F

Small-signal MOSFET; Drain current ID -3.5 A \nDrain-Source voltage VDSS -20 V \nGate-Source voltage VGSS +/-8 V \n;

Polarity：P-ch\nGeneration：U-MOSⅥ\nRoHS Compatible Product(s) (#)：Available\n

SSM3J327R

MOSFETsSiliconP-ChannelMOS(U-MOSVI)

Applications ?PowerManagementSwitches Features (1)1.5-Vdrive (2)Lowdrain-sourceon-resistance :RDS(ON)=240mΩ(max)(@VGS=-1.5V) RDS(ON)=168mΩ(max)(@VGS=-1.8V) RDS(ON)=123mΩ(max)(@VGS=-2.5V) RDS(ON)=93mΩ(max)(@VGS=-4.5V)

SSM3J327R

P-Channel20-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?LoadSwitch ?PASwitch ?DC/DCConverters

SSM3J327R

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

SSM3J327R

Field-EffectTransistorSiliconP-ChannelMOSType(U-MOS??

○PowerManagementSwitchApplications ?1.5-Vdrive ?LowON-resistance:RDS(ON)=240m?(max)(@VGS=-1.5V) RDS(ON)=168m?(max)(@VGS=-1.8V) RDS(ON)=123m?(max)(@VGS=-2.5V)